NTE2319MP NTE

NTE2319 Silicon NPN Transistor High Voltage, High Speed Power Switch Description: The NTE2319 is a silicon NPN transistor in a TO3 type package designed for high voltage, high speed, power switching in inductive circuits where fall time is critical. It is particularly suited for lineoperated switchmode applications. Features: Fast TurnOn Times T = +100C: C Inductive Fall Time: 50ns Typ Inductive Crossover Time: 90ns Typ Inductive Storage Time: 800ns Typ 100C Performance Specified for: ReverseBiased SOA with Inductive Loads Switching Times with Inductive Loads Saturation Voltages Leakage Current Applications: Switching Regulators Inverters Solenoids Relay Drivers Motor Controls Deflection Circuits Absolute Maximum Ratings: CollectorEmitter Voltage, V . 450V CEO CollectorEmitter Voltage, V . 850V CEV EmitterBase Voltage, V . 6V EB Collector Current, I C Continuous 15A Peak (Note 1) 20A Base Current, I B Continuous 10A Peak (Note 1) 15A Total Device Dissipation, P D T = +25C 175W C T = +100C . 100W C Derate Above 25C . 1W/C Operating Junction Temperature Range, T 65 to +200C J Storage Temperature Range, T 65 to +200C stg Thermal Resistance, JunctiontoCase, R . 1C/W thJC Lead Temperature (During Soldering, 1/8 from case, 5sec), T . +275C L Note 1. Pulse Test: Pulse Width 5 s, Duty Cycle 10%.Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Sustaining Voltage V Table 2, I = 100mA, I = 0 450 V CEO(sus) C B Collector Cutoff Current I T = +25C 0.25 mA V = 850V, CEV CEV C V = 1.5V BE(off) T = +100C 1.5 mA C I V = 850V, R = 50 , T = +100C 2.5 mA CER CE BE C Emitter Cutoff Current I V = 6V, I = 0 1.0 mA EBO EB C ON Characteristics (Note 2) CollectorEmitter Saturation Voltage V I = 5A, I = 700mA 2.5 V CE(sat) C B I = 10A, I = 1.3A T = +25C 3.0 V C B C T = +100C 3.0 V C BaseEmitter Saturation Voltage V I = 10A, I = 1.3A T = +25C 1.5 V BE(sat) C B C T = +100C 1.5 V C DC Current Gain h I = 15A, V = 5V 5 FE C CE Dynamic Characteristics Output Capacitance C V = 10V, I = 0, f = 1kHz 400 pF ob CB E test Switching Characteristics Resistive Load (Table 1) Delay Time t I = 10A, I = 2.6A, 20 ns d C B2 V = 250V, R = 1.6 CC B Rise Time t 200 ns r II = 1.3A, = 1.3A, B1 Storage Time t 1200 ns PW = 30s, s Duty Cycle 2% Fall Time t 200 ns f Storage Time t 650 ns V = 5V s BE(off) Fall Time t 80 ns f Inductive Load (Table 2) Storage Time t I = 10A, T = +100C 800 1800 ns sv C C I = 1.3A, B1 Fall Time t 50 200 ns fi VV = 5V = 5V,, BE(off) Crossover Time t 90 250 ns V = 400V c CE(pk)CE(pk) Storage Time t T = +150C 1050 ns sv C Fall Time t 70 ns fi Crossover Time t 120 ns c Note 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2%.