NTE130 (NPN) & NTE219 (PNP) Silicon Power Transistor Audio Power Amp, Medium Speed Switch Description: The NTE130 (NPN) and NTE219 (PNP) are silicon complementary transistors in a TO3 type case designed for general purpose switching and amplifier applications. Features: DC Current Gain: h = 20 70 I = 4A FE C CollectorEmitter Saturation Voltage: V = 1.1V (Max) I = 4A CE(sat) C Excellent Safe Operating Area Absolute Maximum Ratings: CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V CEO CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V CER CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V CB EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V EB Continuous Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A C Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A B Total Device Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115W C D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.657W/C Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C stg Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.52C/W thJC Electrical Characteristics: (T =+25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Sustaining Voltage V I = 200mA, I = 0, Note 1 60 V CEO(sus) C B CollectorEmitter Sustaining Voltage V 70 V I = 200mA, R = 100 , Note 1 CER(sus) C BE Collector Cutoff Current I V = 30V, I = 0 0.7 mA CEO CE B I V = 100V, V = 1.5V 1.0 mA CEX CE BE(off) V = 100V, V = 1.5V, T = +150C 5.0 mA CE BE(off) C Emitter Cutoff Current I V = 7V, I = 0 5.0 mA EBO BE C Note 1. Pulse Test: Pulse Width 300 s. Duty Cycle 2%.Electrical Characteristics (Contd): (T =+25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics (Note 1) DC Current Gain h I = 4A, V = 4V 20 70 FE C CE I = 10A, V = 4V 5 C CE CollectorEmitter Saturation Voltage V I = 4A, I = 400mA 1.1 V CE(sat) C B I = 10A, I = 3.3A 3.0 V C B BaseEmitter ON Voltage V I = 4A, V = 4V 1.5 V BE(on) C CE Second Breakdown Second Breakdown Collector Current I V = 40V, t = 1.0s Nonrepetitive 2.87 A s/b CE with Base Forward Biased Dynamic Characteristics Current GainBandwidth Product f I = 500mA, V = 10V, f = 1MHz 2.5 MHz T C CE SmallSignal Current Gain h I = 1A, V = 4V, f = 1kHz 15 120 fe C CE SmallSignal Current Gain Cutoff f V = 4V, I = 1A, f = 1kHz 10 kHz hfe CE C Frequency Note 1. Pulse Test: Pulse Width 300 s. Duty Cycle 2%. Note 2. NTE130MP is a matched pair of NTE130 with their DC Current Gain (h ) matched to within FE 10% of each other. Note 3. NTE219MCP is a matched complementary pair containing 1 each of NTE219 (PNP) and NTE130 (NPN). .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min .040 (1.02) Emitter 1.187 (30.16) .215 (5.45) .665 (16.9) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max .525 (13.35) R Max Base Collector/Case