NTE2345 (NPN) & NTE2346 (PNP) Silicon Complementary Transistors General Purpose Darlington, Power Amplifier Description: The NTE2345 (NPN) and NTE2346 (PNP) are silicon complementary Darlington transistors in an SOT82 type package designed for use in audio output stages and general amplifier and switching applications.. Features: High DC Current Gain: h = 750 (Min) I = 3A, V = 3V FE C CE Junction Temperature to +150C Absolute Maximum Ratings: CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V CEO Collector Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V CBO Emitter Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EBO Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A Peak (t 10ms, 0.1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A p Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mA B Total Power Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60W C D Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C stg Thermal Resistance, Junction toCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.08K/W thJC Thermal Resistance, Junction toAmbient, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100K/W thJA Note 1. NTE2346 is a discontinued device and no longer available. Electrical Characteristics: (T = +25C unless otherwise specified) J Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I I = 0, V = 120V 0.2 mA CBO E CBO I = 0, V = 120V, T = +150C 2mA mA E CBO J I I = 0, V = 60V 0.5 mA CEO B CEO Emitter Cutoff Current I I = 0, V = 5V 5 mA EBO C EBO DC Current Gain h I = 500mA, V = 3V, Note 1 2700 FE C CEO I = 3A, V = 3V, Note 2 750 C CEO I = 6A, V = 3V, Note 2 400 C CEO Note 2. Pulse Test: Pulse Width 300s, Duty Cycle 2%.Electrical Characteristics (Contd): (T = +25C unless otherwise specified) J Parameter Symbol Test Conditions Min Typ Max Unit BaseEmitter Voltage V I = 3A, V = 3V, Note 3 2.5 V BE C CEO CollectorEmitter Saturation Voltage V I = 3A, I = 12mA 2.0 V CE(sat) C B SmallSignal Current Gain h I = 3A, V = 3V, f = 1MHz 10 fe C CEO Cut Off Frequency f I = 3A, V = 3V 100 kHz hfe C CEO Diode, Forward Voltage V I = 3A 1.8 V F F Second Breakdown Collector Current I V = 60V, t = 25ms 1 A (SB) CEO p NonRepetitive, without Heatsink TurnOn Time t I = 3A, I = I = 12mA 1 2 s on C(on) B(on) B(off) Turn Off Time t I = 3A, I = I = 12mA 5 10 s off C(on) B(on) B(off) Note 3. V decreases by about 3.8mV/K with increasing temperature. BE Schematic Diagram C C B B E E NPN PNP .307 (7.8) .100 (2.54) Max See Note .147 (3.75) .118 (3.0) Min .437 (11.1) Max BC E .100 (2.54) .602 (15.3) Min .090 (2.29) .047 (1.2) Note: Collector connected to metal part of mounting surface.