NTE2348 Silicon NPN Transistor High Voltage, High Speed Switch Features: High Breakdown Voltage, High Reliability Fast Switching Speed Wide Safe Operating Area Absolute Maximum ratings: (T = +25C unless otherwise specified) A CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1100V CBO CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V CEO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V EBO Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A B Collector Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W C C Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Note 1. Pulse Width 300 s, Duty Cycle 10%. Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 800V, I = 0 10 A CBO CB E Emitter Cutoff Current I V = 5V, I = 0 10 A EBO EB C DC Current Gain h V = 5V, I = 800mA 10 FE (1) CE C h V = 5V, I = 4A 8 FE (2) CE C Gain Bandwidth Product f V = 10V, I 800mA 15 MHz T CE C Output Capacitance C V = 10V, f = 1MHz 215 pF ob CB CollectorEmitter Saturation Voltage V I = 6A, I = 1.2mA 2.0 V CE(sat) C B BaseEmitter Saturation Voltage V I = 6A, I = 1.2mA 1.5 V BE(sat) C BElectrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit CollectorBase Breakdown Voltage V I = 1mA, I = 0 1100 V (BR)CBO C E CollectorEmitter Breakdown Voltage V I = 5mA, R = 800 V (BR)CEO C BE EmitterBase Breakdown Voltage V I = 1mA, I = 0 7 V (BR)EBO E C CollectorEmitter Sustaining Voltage V I = 6A, I = I = 1.2mA, 800 V CEX(sus) C B1 B2 L = 2mH, Clamped TurnOn Time t 0.5 s V = 400V, I = 2.5A, on CC B1 I =I = 8A, R = 50 B2 C L Storage Time t 3.0 s stg Fall Time t 0.3 s f .190 (4.82) .615 (15.62) C .787 (20.0) .591 .126 (15.02) (3.22) Dia .787 (20.0) BC E .215 (5.47)