NTE235 Silicon NPN Transistor Final RF Power Output Description: The NTE235 is an NPN silicon transistor in a TO220 type case designed for use in high power output amplifier stages such as citizen band communications equipment. Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorEmitter Voltage (R = 150 ), V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V BE CER CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V CBO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EBO Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Collector Dissipation, P C T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2W A T = +50C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W C Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Electrical Characteristics: (T =+25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit CollectorBase Breakdown Voltage V I = 100 A, I = 0 80 V (BR)CBO C B CollectorEmitter Breakdown Voltage V I = 1mA, R = 150 75 V (BR)CER C BE EmitterBase Breakdown Voltage V I = 100 A, I = 0 5 V (BR)EBO E C Collector Cutoff Current I V = 40V, I = 0 10 A CBO CB E Emitter Cutoff Current I V = 4V, I = 0 10 A EBO EB C DC Current Gain h V = 5V, I = 500mA 25 200 FE CE C CollectorEmitter Saturation Voltage V I = 1A, I = 100mA 0.15 0.6 V CE(sat) C B BaseEmitter Saturation Voltage V I = 1A, I = 100mA 0.9 1.2 V BE(sat) C B Current GainBandwidth Product f V = 10V, I = 100mA 100 150 MHz T CE C Output Capacitance C V = 10V, f = 1MHz 45 60 pF ob CB Power Output P V = 12V, P = 0.2W, 4.0 W O CC in f = 27MHz Collector Efficiency 60 %.420 (10.67) Max .110 (2.79) .147 (3.75) .500 Dia Max (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Base Emitter Collector/Tab .100 (2.54)