X-On Electronics has gained recognition as a prominent supplier of NTE2354 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE2354 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NTE2354 NTE

NTE2354 electronic component of NTE
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See Product Specifications
Part No.NTE2354
Manufacturer: NTE
Category: Bipolar Transistors - BJT
Description: Transistor: NPN; bipolar; 800V; 10A; 150W; TO3P
Datasheet: NTE2354 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 14.9062 ea
Line Total: USD 74.53 
Availability - 0
MOQ: 5  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 5
Multiples : 1
5 : USD 14.9062
50 : USD 9.612
100 : USD 8.8668
200 : USD 8.2296
500 : USD 7.6896

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 17.2329
2 : USD 11.2896
4 : USD 10.679

   
Manufacturer
Product Category
Polarisation
Mounting
Case
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Power Dissipation
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE2354 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE2354 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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NTE2354 Silicon NPN Transistor High Voltage Horizontal Output for High Definition CRT Applications: Highdefinition color display horizontal deflection output Features: Fast speed: t = 100ns Typ f High breakdown voltage: V = 1500V CBO High reliability Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectortoBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V CBO CollectortoEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V CEO EmittertoBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V EBO Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A C Peak Collector Current, i . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A cp Collector Dissipation (T = +25C), P 150W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . C C Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 1500V, R = 0 1.0 mA CES CE BE Collector Sustain Voltage V I = 100mA, I = 0 800 V CEO(sus) C B Emitter Cutoff Current I V = 4V, I = 0 1.0 mA EBO EB C Saturation Voltage V I = 8A, I = 2.0A 5.0 V CE(sat) C B CollectortoEmitter Saturation Voltage V I = 8A, I = 2.0A 1.5 V BE(sat) C B BasetoEmitter DC Current Gain h V = 5V, I = 1.0A 8 FE CE C Storage Time t I = 6A, I = 1.2A, I = 2.4A 3.0 s stg C B1 B2 Fall Time t I = 6A, I = 1.2A, I = 2.4A 0.1 0.2 s f C B1 B2.190 (4.82) .615 (15.62) C .787 (20.0) .591 .126 (15.02) (3.22) Dia .787 (20.0) BC E .215 (5.47)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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