NTE2349 (NPN) & NTE2350 (PNP) Silicon Darlington Transistors High Current, General Purpose Description: The NTE2349 (NPN) and NTE2350 (PNP) are silicon complementary Darlington transistors in a TO3 type package designed for use as output devices in general purpose amplifier applications. Features: High DC Current Gain: h = 1000 (Min) I = 25A FE C h = 400 (Min) I = 50A FE C Diode Protection to Rated I C w Monolithic Construction /BuiltIn BaseEmitter Shunt Resistor Junction Temperature to +200C Absolute Maximum Ratings: CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V CEO CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V CB EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EB Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100A Continuous Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A B Total Power Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300W C D Derate Above 25C T = +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.71W/C C Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +200C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +200C stg Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.584C thJC Lead Temperature (During Soldering, 10sec Max), T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +275C L Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Breakdown Voltage V I = 100mA, I = 0 120 V (BR)CEO C B CollectorEmitter Leakage Current I V = 120V, R = 1k 2 mA CER CE BE V = 120V, R = 1k , T = +150C 10 mA CE BE C I V = 50V, I = 0 2 mA CEO CE B Emitter Cutoff Current I V = 5V, I = 0 2 mA EBO BE CElectrical Characteristics (Contd): (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics (Note 1) DC Current Gain h I = 25A, V = 5V 1000 18000 FE C CE I = 50A, V = 5V 400 C CE CollectorEmitter Saturation Voltage V I = 25A, I = 250mA 2.5 V CE(sat) C B I = 50A, I = 500mA 3.5 V C B BaseEmitter Saturation Voltage V I = 25A, I = 200mA 3.0 V BE(sat) C B I = 50A, I = 300mA 4.5 V C B Note 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. Schematic Diagram C C B B E E NPN PNP .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min .061 (1.55) Max Emitter 1.187 (30.16) .665 .215 (5.45) (16.9) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max .525 (13.35) R Max Base Collector/Case