NTE253 (NPN) & NTE254 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE253 (NPN) and NTE254 (PNP) are silicon complementary Darlington transistors in a TO126 type case designed for generalpurpose amplifier and lowspeed switching applications. Features: High DC Current Gain: h = 2000 (Typ) I = 2A FE C Monolithic Construction with BuiltIn BaseEmitter Resistors to Limit Leakage Multiplication Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V CEO CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V CB EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EB Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A C Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA B Total Power Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W C D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.32W/C Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C stg Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.23C/W thJC Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Breakdown Voltage V I = 50mA, I = 0, Note 1 80 V (BR)CEO C B Collector Cutoff Current I V = 80V, I = 0 100 A CEO CE B I V = 80V, I = 0 100 A CBO CE E V = 80V, I = 0, T = +100C 500 A CE E C Emitter Cutoff Current I V = 5V, I = 0 2.0 mA EBO BE CElectrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics (Note 1) DC Current Gain h FE NTE253 V = 3V, I = 1.5A 750 2000 CE C NTE254 V = 3V, I = 2A 750 2000 CE C NTE253 & NTE253 V = 3V, I = 4A 100 CE C CollectorEmitter Saturation Voltage V CE(sat) NTE253 I = 1.5A, I = 30mA 2.5 V C B NTE254 I = 2.0A, I = 40mA 2.8 V C B NTE253 & NTE254 I = 4.0A, I = 40mA 3.0 V C B BaseEmitter ON Voltage V BE(on) NTE253 V = 3V, I = 1.5A 2.5 V CE C NTE254 V = 3V, I = 2.0A 2.5 V CE C NTE253 & NTE254 V = 3V, I = 4.0A 3.0 V CE C Dynamic Characteristics SmallSignal Current Gain h V = 3V, I = 1.5A, f = 1MHz 1.0 fe CE C Note 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2% Note 2. NTE253MCP is a matched complementary pair containing 1 each of NTE253 (NPN) and NTE254 (PNP). .330 (8.38) NTE253 Max .175 C (4.45) B .450 Max (11.4) Max E .118 (3.0) Dia .655 (16.6) Max NTE254 .030 (.762) Dia C EC B B .090 (2.28) .130 (3.3) E Max