NTE263 (NPN) & NTE264 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE263 (NPN) and NTE264 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and lowspeed switching applications. Features: High DC Current Gain: h = 2500 Typ (NTE263) FE = 3500 Typ (NTE264) CollectorEmitter Sustaining Voltage: V = 100V Min CEO(sus) Low CollectorEmitter Saturation Voltage: V = 2V Max I = 5A CE(sat) C Monolithic Construction with BuiltIn BaseEmitter Shunt Resistor Absolute Maximum Ratings: CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V CEO CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V CB EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EB Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA B Total Power Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65W C D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.52W/C Total Power Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W A D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.016W/C Operating Junction Temperature range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C J Storage Temperature range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C stg Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.92C/W thJC Thermal Resistance, JunctiontoAmbient, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5C/W thJAElectrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Sustaining Voltage V I = 200mA, I = 0, Note 1 100 V CEO(sus) C B Collector Cutoff Current I V = 100V, I = 0 1.0 mA CEO CE B I V = 100V, V = 1.5V 300 A CEX CE EB(off) V = 100V, V = 1.5V, T = +125C 3 mA CE EB(off) C Emitter Cutoff Current I V = 5V, I = 0 5 mA EBO BE C ON Characteristics (Note 1) DC Current Gain h I = 5A, V = 3V 1000 20000 FE C CE I = 10A, V = 3V 100 C CE CollectorEmitter Saturation Voltage V I = 5A, I = 0.01A 2 V CE(sat) C B I = 10A, I = 0.1A 3 V C B BaseEmitter ON Voltage V I = 3A, V = 3V 2.8 V BE(on) C CE I = 10A, V = 3V 4.5 V C CE Dynamic Characteristics SmallSignal Current Gain h I = 1A, V = 5V, f = 1MHz 20 fe C CE test Output Capacitance C V = 10V, I = 0, f = 1MHz 200 pF ob CB E SmallSignal Current Gain h I = 1A, V = 5V, f = 1kHz 1000 fe C CE Note 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. NTE263 .420 (10.67) Max C .110 (2.79) B .147 (3.75) .500 Dia Max (12.7) E Min .250 (6.35) Max NTE264 .500 (12.7) Max C .070 (1.78) Max B Base Emitter .100 (2.54) Collector/Tab E