X-On Electronics has gained recognition as a prominent supplier of NTE264 Darlington Transistors across the USA, India, Europe, Australia, and various other global locations. NTE264 Darlington Transistors are a product manufactured by NTE. We provide cost-effective solutions for Darlington Transistors, ensuring timely deliveries around the world.

NTE264 NTE

NTE264 electronic component of NTE
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See Product Specifications
Part No.NTE264
Manufacturer: NTE
Category: Darlington Transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 10A; 65W; TO220
Datasheet: NTE264 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 4.0698 ea
Line Total: USD 4.07 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 3
Multiples : 1
3 : USD 11.4156
25 : USD 4.4487
50 : USD 2.9702
100 : USD 2.6562
250 : USD 2.473
500 : USD 2.3029
1000 : USD 2.2505

0
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 7.56
10 : USD 7.0535
25 : USD 6.4638
100 : USD 5.7607
250 : USD 5.3298
500 : USD 4.5511

0
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 4.0698
3 : USD 3.6666
6 : USD 2.7468
16 : USD 2.5956

   
Manufacturer
Product Category
Polarisation
Case
Mounting
Kind Of Transistor
Kind Of Package
Type Of Transistor
Collector Current
Collector-Emitter Voltage
Power Dissipation
Current Gain
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE264 from our Darlington Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE264 and other electronic components in the Darlington Transistors category and beyond.

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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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NTE263 (NPN) & NTE264 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE263 (NPN) and NTE264 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and lowspeed switching applications. Features: High DC Current Gain: h = 2500 Typ (NTE263) FE = 3500 Typ (NTE264) CollectorEmitter Sustaining Voltage: V = 100V Min CEO(sus) Low CollectorEmitter Saturation Voltage: V = 2V Max I = 5A CE(sat) C Monolithic Construction with BuiltIn BaseEmitter Shunt Resistor Absolute Maximum Ratings: CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V CEO CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V CB EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EB Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA B Total Power Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65W C D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.52W/C Total Power Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W A D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.016W/C Operating Junction Temperature range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C J Storage Temperature range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C stg Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.92C/W thJC Thermal Resistance, JunctiontoAmbient, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5C/W thJAElectrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Sustaining Voltage V I = 200mA, I = 0, Note 1 100 V CEO(sus) C B Collector Cutoff Current I V = 100V, I = 0 1.0 mA CEO CE B I V = 100V, V = 1.5V 300 A CEX CE EB(off) V = 100V, V = 1.5V, T = +125C 3 mA CE EB(off) C Emitter Cutoff Current I V = 5V, I = 0 5 mA EBO BE C ON Characteristics (Note 1) DC Current Gain h I = 5A, V = 3V 1000 20000 FE C CE I = 10A, V = 3V 100 C CE CollectorEmitter Saturation Voltage V I = 5A, I = 0.01A 2 V CE(sat) C B I = 10A, I = 0.1A 3 V C B BaseEmitter ON Voltage V I = 3A, V = 3V 2.8 V BE(on) C CE I = 10A, V = 3V 4.5 V C CE Dynamic Characteristics SmallSignal Current Gain h I = 1A, V = 5V, f = 1MHz 20 fe C CE test Output Capacitance C V = 10V, I = 0, f = 1MHz 200 pF ob CB E SmallSignal Current Gain h I = 1A, V = 5V, f = 1kHz 1000 fe C CE Note 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. NTE263 .420 (10.67) Max C .110 (2.79) B .147 (3.75) .500 Dia Max (12.7) E Min .250 (6.35) Max NTE264 .500 (12.7) Max C .070 (1.78) Max B Base Emitter .100 (2.54) Collector/Tab E

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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