TIP127 STMicroelectronics

TIP120, TIP121, TIP122 TIP125, TIP127 Datasheet Low voltage complementary power Darlington transistors Features Low collector-emitter saturation voltage TAB Complementary NPN - PNP transistors 3 Application 2 1 General purpose linear and switching TO-220 Description The devices are manufactured in planar technology with base island layout and C (2, TAB) C (2, TAB) monolithic Darlington configuration. The resulting transistors show exceptional high B (1) B (1) gain performance coupled with very low saturation voltage. R1 R1 R2 R2 SC07840 SC07850 E (3) E (3) NPN: R1 = 7 k, R2 = 70 PNP: R1 = 16 k, R2 = 60 Product status links TIP120 TIP121 TIP122 TIP125 TIP127 DS0854 - Rev 5 - May 2021 www.st.com For further information contact your local STMicroelectronics sales office.TIP120, TIP121, TIP122, TIP125, TIP127 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Parameter Value Symbol NPN TIP120 TIP121 TIP122 Unit PNP TIP125 TIP127 V Collector-base voltage (I = 0 A) 60 80 100 V CBO E V Collector-emitter voltage (I = 0 A) 60 80 100 V CEO B V Collector-base voltage (I = 0 A) 5 V EBO C I Collector current 5 A C I Collector peak current 8 A CM I Base current 0.12 A B Total power dissipation at T 25C 65 C P W TOT Total power dissipation at T 25C 2 A T Storage temperature range -65 to 150 C stg T Maximum operating junction temperature 150 C J Note: For PNP types voltage and current values are negative. Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance, junction-to-case 1.92 C/W thJC R Thermal resistance, junction-to-ambient 62.5 C/W thJA DS0854 - Rev 5 page 2/13