TIP127FP STMicroelectronics

TIP122FP TIP127FP Complementary power Darlington transistors Features Low collector-emitter saturation voltage Complementary NPN - PNP transistors TO-220FP isolated package UL compliant Application 3 2 1 General purpose linear and switching TO-220FP Description The devices are manufactured in planar technology with base island layout and monolithic Darlington configuration. The resulting Figure 1. Internal schematic diagrams transistors show exceptional high gain performance coupled with very low saturation voltage. NPN: R = 7 k PNP: R = 16 k 1 1 R = 70 R = 60 2 2 Table 1. Device summary Order codes Marking Polarity Package Packaging TIP122FP TIP122FP NPN TO-220FP Tube TIP127FP TIP127FP PNP December 2009 Doc ID 5309 Rev 5 1/11 www.st.com 11Electrical ratings TIP122FP, TIP127FP 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-base voltage (I = 0) 100 V CBO E V Collector-emitter voltage (I = 0) 100 V CEO B V Emitter-base voltage (I = 0) 5 V EBO C I Collector current 5 A C I Collector peak current 8 A CM I Base current 0.12 A B Total dissipation at T 25 C 30 c P W TOT T 25 C 2 amb T Storage temperature -65 to 150 STG C T Max. operating junction temperature 150 J Note: For PNP types voltage and current values are negative. Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case max. 4.2 thJC C/W R Thermal resistance junction-ambient max. 62.5 thJA 2/11 Doc ID 5309 Rev 5