FJP9100 FJP9100 High Voltage Power Darlington Transistor Built-in Resistor at Base-Emitter : R (Typ.)=2000 1 Built-in Resistor at Base : R (Typ.)=700 100 B TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Darlington Transistor Equivalent Circuit Absolute Maximum Ratings T =25C unless otherwise noted C C Symbol Parameter Value Units V Collector-Base Voltage 600 V CBO V Collector-Emitter Voltage 275 V B CEO R B V Emitter-Base Voltage 10 V EBO I Collector Current (DC) 4 A C R 1 I *Collector Current (Pulse) 6 A CP R 2000 1 I Base Current (DC) 0.5 A B R 700 B P Collector Dissipation (T =25C) 40 W E C C T Junction Temperature 150 C J T Storage Temperature - 55 ~ 150 C STG * Pulse Test: PW=300 s, duty Cycle=2% Pulsed Electrical Characteristics T =25C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I = 500 A, I = 0 600 V CBO C E BV Collector-Emitter Breakdown Voltage I = 1mA, R = 330 600 V CER C BE BV (sus) Collector-Emitter Sustaining Voltage I = 1.5A, I = 50mA, L=25mH 275 V CEO C B BV Emitter-Base Breakdown Voltage I = 500 A, I = 0 10 V EBO E C I Collector Cut-off Current V = 600V, I = 0 0.1 mA CBO CB E I Emitter Cut-off Current V = 10V, I = 0 0.1 mA EBO EB C h DC Current Gain V = 5V, I = 0.5A 1000 5000 FE CE C V = 5V, I = 3A 1000 CE C V (sat) Collector-Emitter Saturation Voltage I = 2A, I = 5mA 1.5 V CE C B V (sat) Base-Emitter Saturation Voltage I = 2A, I = 5mA 6.0 V BE C B C Output Capacitance V = 10V, I = 0, f=1MHz 110 pF ob CB E 2003 Fairchild Semiconductor Corporation Rev. A, May 2003FJP9100 Typical Characteristics 5 10k I = 1.4mA o B Ta = 75 C o 4 Ta = 125 C 1k o 3 Ta = 25 C I = 0.6mA B o Ta = - 25 C 2 I = 0.4mA B 100 1 V = 5V I = 0 CE B 0 10 0123 456 7 0.1 1 10 V V , COLLECTOR-EMITTER VOLTAGE I A , COLLECTOR CURRENT CE C Figure 1. Static Characterstic Figure 2. DC current Gain 100 100 I = 400 I I = 400 I C B C B o Ta = 125 C 10 10 o Ta = 75 C o Ta = 125 C o Ta = 75 C o o 1 1 Ta = 25 C Ta = 25 C o Ta = - 25 C o Ta = - 25 C 0.1 0.1 0.1 1 10 0.1 1 10 I A , COLLECTOR CURRENT I A , COLLECTOR CURRENT C C Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter Saturation Voltage 10k 1000 f = 1MHz, I = 0 E R 1 1k 100 R B 100 10 -50 -25 0 25 50 75 100 125 150 110 100 o V V , COLLECTOR-BASE VOLTAGE T C , ABBIENT TEMPERATURE CB A Figure 5. R & R vs. Ambient Temperature Figure 6. Output Capacitance B 1 2003 Fairchild Semiconductor Corporation Rev. A, May 2003 R & R , RESISTANCE V (sat) V , SATURATION VOLTAGE B 1 CE I A , COLLECTOR CURRENT C Cob pF , OUPUT CAPACITANCE V (sat), SATURATION VOLTAGE DC CURRENT GAIN BE