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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.FJPF2145 ESBC Rated NPN Power Transistor April 2013 FJPF2145 ESBC Rated NPN Power Transistor ESBC Features (FDC655 MOSFET) Description (1) The FJPF2145 is a low-cost, high-performance power V I Equiv. R CS(ON) C CS(ON) switch designed to provide the best performance when 0.21 V 2 A 0.105 used in an ESBC configuration in applications such as: power supplies, motor drivers, smart grid, or ignition Low Equivalent On Resistance switches. The power switch is designed to operate up to Very Fast Switch: 150 kHz 1100 volts and up to 5 amps, while providing exception- Wide RBSOA: Up to 1100 V ally low on-resistance and very low switching losses. Avalanche Rated The ESBC switch can be driven using off-the-shelf Low Driving Capacitance, no Miller Capacitance power supply controllers or drivers. The ESBC MOS- Low Switching Losses FET is a low-voltage, low-cost, surface-mount device that Reliable HV Switch: No False Triggering due to combines low-input capacitance and fast switching. The High dv/dt Transients ESBC configuration further minimizes the required driv- ing power because it does not have Miller capacitance. Applications The FJPF2145 provides exceptional reliability and a large High-Voltage, High-Speed Power Switches operating range due to its square reverse-bias-safe-oper- ating-area (RBSOA) and rugged design. The device is Emitter-Switched Bipolar/MOSFET Cascode avalanche rated and has no parasitic transistors, so is not (ESBC ) prone to static dv/dt failures. Smart Meters, Smart Breakers, SMPS, The power switch is manufactured using a dedicated HV Industrial Power Supplies high-voltage bipolar process and is packaged in a high- Motor Drivers and Ignition Drivers voltage TO-220F package. C 2 C FJPF2145 B 1 B FDC655 TO-220F G 1 3 1.Base 2.Collector 3.Emitter E S (2) Figure 1. Pin Configuration Figure 2. Internal Schematic Diagram Figure 3. ESBC Configuration Ordering Information Part Number Marking Package Packing Method FJPF2145TU J2145 TO-220F TUBE Notes: 1. Figure of Merit. 2. Other Fairchild MOSFETs can be used in this ESBC application. 2013 Fairchild Semiconductor Corporation www.fairchildsemi.com FJPF2145 Rev. 1.0.0 1