NTE2640 Silicon NPN Transistor Color TV Horizontal Deflection Output TO220 Full Pack Features: High Speed High Collector Emitter Breakdown Voltage High Reliability OnChip Damper Diode Absolute Maximum Ratings: (T + 25C unless otherwise specified) A Collector Base Voltage, V ..................................................... 1500V CBO CollectorEmitter Voltage, V ..................................................... 800V CEO EmitterBase Voltage, V .......................................................... 6V EBO Collector Current, I C Continuous ................................................................... 6A Pulse ....................................................................... 15A Collector Dissipation, P C T + 25C ................................................................... 2W A T + 25C .................................................................. 30W C Operating Junction Temperature, T ............................................... +150 C J Storage Temperature Range, T .......................................... 55 to +150C stg Electrical Characteristics: (T + 25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 800V, I = 0 10 A CBO CE E I V = 1500V, R = 0 1.0 mA CES CE BE Emitter Cutoff Current I V = 4V, I = 0 40 mA EBO EB C CollectorEmitter Sustaining Voltage V I = 100mA, I = 0 800 V CEO(sus) C B CollectorEmitter Saturation Voltage V I = 3.15A, I = 630mA 3.0 V CE(sat) C B BaseEmitter Saturation Voltage V I = 3.15A, I = 630mA 1.5 V BE(sat) C B DC Current Gain h V = 5V, I = 500mA 10 FE CE C V = 5V, I = 3.5A 5 8 CE C Diode Forward Voltage V I = 6A 2 V F EC Fall Time t V = 200V, V = 2V, I = 2A, 0.3 s f CC BE C I = 400mA, I = 800mA, B1 B2 Pulse Width = 20s, Duty Cycle 1% Rev. 615.177 (4.5) .394 (10.0) .110 (2.8) .138 Isol (3.5) .283 (7.2) .630 (16.0) .634 (16.1) B C E .142 (3.6) .024 (0.6) .551 (14.0) .100 (2.54)