X-On Electronics has gained recognition as a prominent supplier of NTE269 Darlington Transistors across the USA, India, Europe, Australia, and various other global locations. NTE269 Darlington Transistors are a product manufactured by NTE. We provide cost-effective solutions for Darlington Transistors, ensuring timely deliveries around the world.

NTE269 NTE

NTE269 electronic component of NTE
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See Product Specifications
Part No.NTE269
Manufacturer: NTE
Category: Darlington Transistors
Description: Transistor: PNP; bipolar; Darlington; 50V; 2A; 10W; TO202N
Datasheet: NTE269 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 5.418 ea
Line Total: USD 5.42 
Availability - 18
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
18
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 5.418
3 : USD 4.886
5 : USD 3.724
13 : USD 3.514

   
Manufacturer
Product Category
Polarisation
Case
Mounting
Kind Of Transistor
Kind Of Package
Type Of Transistor
Collector Current
Collector-Emitter Voltage
Power Dissipation
Current Gain
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE269 from our Darlington Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE269 and other electronic components in the Darlington Transistors category and beyond.

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NTE268 (NPN) & NTE269 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE268 (NPN) and NTE269 (PNP) are silicon complementary Darlington transistors in a TO202 type package designed for amplifier and driver applications where high gain is an essential require ment, low power lamp and relay drivers and power drivers for high-current applications such as volt age regulators. Features: Low Collector-Emitter Saturation Voltage: V = 1.5V Max I = 1.5A CE(sat) C TO202 Type Package: 2W Free Air Dissipation T = +25 C A Absolute Maximum Ratings: Collector-Emitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V CEO Collector-Emitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V CES Emitter-Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13V EBO Colllector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A Continuous Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA B Total Power Dissipation (T = +25 C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67W A D Derate Above 25 C (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.3mW/ C Total Power Dissipation (T = +25 C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W C D Derate Above 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80mW/ C Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150 C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150 C stg Thermal Resistance, Junction-to-Ambient, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75 C/W thJA Thermal Resistance, Junction-to-Case, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.5 C/W thJC Note 1. Pulse Width 25ms, Duty Cycle 50%. Note 2. The actual power dissipation capability of the TO202 type package is 2W T = +25 C. AElectrical Characteristics: (T = +25 C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector-Emitter Breakdown Voltage V I = 10mA, Note 3 50 - - V (BR)CEO C Collector Cutoff Current I V = 50V, I = 0, T = +150C - - 20 A CBO CB E J I V = 50V, V = 0 - - 0.5 A CES CE BE Emitter Cutoff Current I V = 13V, I = 0 - - 100 nA EBO EB C ON Characteristics (Note 4) DC Current Gain h I = 200mA, V = 5V 10000 - - FE C CE I = 1.5A, V = 5V 1000 - - C CE Collector-Emitter Saturation Voltage V I = 1.5A, I = 3mA - - 1.5 V CE(sat) C B Base-Emitter Saturation Voltage V I = 1.5A, I = 3mA - - 2.5 V BE(sat) C B Dynamic Characteristics Collector Capacitance C cb NTE268 V = 10V, I = 0, f = 1MHz - - 10 pF CB E NTE269 - - 25 pF High Frequency Current Gain h I = 20mA, V = 5V, f = 100MHz 1.0 - - fe C CE Note 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. NTE268 C .380 (9.56) .180 (4.57) B .132 (3.35) Dia C E .500 (12.7) .325 1.200 (9.52) (30.48) Ref .070 (1.78) x 45 Chamf .300 (7.62) .050 (1.27) NTE269 .400 C (10.16) Min B EB C .100 (2.54) .100 (2.54) E

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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