X-On Electronics has gained recognition as a prominent supplier of NTE2690 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE2690 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NTE2690 NTE

NTE2690 electronic component of NTE
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See Product Specifications
Part No.NTE2690
Manufacturer: NTE
Category: Bipolar Transistors - BJT
Description: Transistor: NPN; bipolar; 700V; 8A; 60W; TO3PML
Datasheet: NTE2690 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
20: USD 4.7025 ea
Line Total: USD 94.05 
Availability - 0
MOQ: 20  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 20
Multiples : 1
20 : USD 4.7025
50 : USD 3.1428
100 : USD 2.9052
200 : USD 2.6892
500 : USD 2.5164

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 5.6448
3 : USD 5.0749
5 : USD 3.6909
12 : USD 3.4873

   
Manufacturer
Product Category
Polarisation
Mounting
Case
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Power Dissipation
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE2690 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE2690 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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NTE2690 Silicon NPN Transistor TV Horizontal Deflection Output w /Damper Diode TO3MPL Type Package Features: High Voltage, High Speed Low Collector Saturation Voltage OnChip Damper Diode Applications: Horizontal Deflection Stage in Standard and High Resolution Displays for TVs and Monitors Switching Power Supplies for TVs and Monitors Absolute Maximum Ratings: (T = +25 C unless otherwise specified) A Collector Base Voltage (Open Emitter), V 1700V....................................... CBO CollectorEmitter Voltage (Open Base), V 700V........................................ CEO EmitterBase Voltage (Open Collector), V 10V......................................... EBO Collector Current, I C Continuous ................................................................... 8A Peak (t < 5ms) .............................................................. 15A p Base Current, I B Continuous ................................................................... 5A Peak (t < 5ms) ............................................................... 8A p Collector Dissipation (T = +25 C), P .............................................. 60W C C Operating Junction Temperature, T +150............................................... C J Storage Temperature Range, T .......................................... 65 to +150 C stg Thermal Resistance, Junction toCase, R .................................... 2.08 C/W thJC Electrical Characteristics: (T = +25 C unless otherwise specified) J Parameter Symbol Test Conditions Min Typ Max Unit CollectorEmitter Sustain Voltage V I = 100mA, I = 0 700 V CEO(sus) C B CollectorEmitter Saturation Voltage V I = 5A, I = 1.25A 1.5 V CE(sat) C B BaseEmitter Saturation Voltage V I = 5A, I = 1.25A 1.3 V BE(sat) C B Collector Cutoff Current I V = 1700V, 1.0 mA CES CE V = 0 BE T = +125 C 2.0 mA J Emitter Cutoff Current I V = 5V, I = 0 200 mA EBO EB C DC Current Gain h V = 5V, I = 1A 8 FE1 CE C h V = 5V, I = 5A 6 FE2 CE C Diode Forward Voltage V I = 5A 2.0 V F F.221 (5.6) .134 (3.4) Dia .123 (3.1) .630 (16.0) .315 (8.0) .866 (22.0) BC E .158 (4.0) .804 (20.4) .215 (5.45) .040 (1.0)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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