NTE2696 NTE

NTE2696 Silicon NPN Transistor Low Noise Audio Amplifier TO92 Type Package (Compl to NTE234) Description: The NTE2696 is a silicon NPN transistor in a TO92 type package designed for use in low frequency and low noise applications. The function of this device is to lower the noise figure in the region of low signal source impedance, and to lower the pulse noise. The NTE2696 can also be used in the first stages of equalizer amplifiers. Features: Low Noise: NF = 4db (Typ), R = 100, V = 6V, I = 100A, f = 1kHz G CE C NF = 0.5db (Typ), R = 1k, V = 6V, I = 100A, f = 1kHz G CE C Low Pulse Noise: Low l/f Noise High DC Current Gain: h = 350 to 700 FE High Breakdown Voltage: V = 120V CEO Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Collector Base Voltage, V ...................................................... 120V CBO CollectorEmitter Voltage, V ..................................................... 120V CEO EmitterBase Voltage, V .......................................................... 5V EBO Collector Current, I ............................................................. 100mA C Base Current, I ................................................................. 20mA B Collector Power Dissipation, P .................................................. 300mW C Operating Junction Temperature, T ............................................... +125 C J Storage Temperature Range, T .......................................... 55 to +125C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 120V, I = 0 0.1 A CBO CB E Emitter Cutoff Current I V = 5V, I = 0 0.1 A EBO EB C CollectorEmitter Breakdown Voltage V I = 1mA, I = 2mA 120 V (BR)CEO C CElectrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit DC Current Gain h V = 6V, I = 2mA 350 700 FE CE C CollectorEmitter Saturation Voltage V I = 10mA, I = 1mA 0.3 V CE(sat) C B BaseEmitter Voltage V V = 6V, I = 2mA 0.65 V BE CE C Transition Frequency f V = 6V, I = 1mA 100 MHz T CE C Collector Output Capacitance C V = 10V, I = 0, f = 1MHz 3.0 pF ob CB E Noise Figure NF f = 10Hz, R = 10k 6 dB V = 6V, G CE I = 0.1mA C f = 1kHz, R = 10k 2 dB G f = 1kHz, R = 100 4 dB G .135 (3.45) Min .210 (5.33) Max Seating Plane .500 .165 (4.2) Max (12.7) Min E C B .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max