X-On Electronics has gained recognition as a prominent supplier of NTE2645 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE2645 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NTE2645 NTE

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Part No.	NTE2645
Manufacturer:	NTE
Category:	Bipolar Transistors - BJT
Description:	Transistor: PNP; bipolar; 175V; 1A; 5W; TO39
Datasheet:	NTE2645 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

20: USD 4.2134 ea
Line Total: USD 84.27

Availability - 0

MOQ: 20 Multiples: 1
Pack Size: 1

NTE2645 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Thu. 14 Nov to Wed. 20 Nov MOQ : 20 Multiples : 1	20 : USD 4.2134 50 : USD 2.73 100 : USD 2.5183 200 : USD 2.3177 500 : USD 2.1617

0 Ship by Thu. 14 Nov to Wed. 20 Nov MOQ : 1 Multiples : 1	1 : USD 4.858 3 : USD 4.368 6 : USD 3.178 14 : USD 2.996

Specifications

Manufacturer NTE NTE
Product Category Bipolar Transistors - BJT Bipolar Transistors - BJT
Polarisation Bipolar Bipolar
Mounting Tht Tht
Case To39 To39
Type Of Transistor Pnp Pnp
Collector-Emitter Voltage 175 V 175 V
Collector Current 1 A 1 A
Power Dissipation 5 W 5 W
Current Gain 55 To 300 55 To 300

We are delighted to provide the NTE2645 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE2645 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

NTE2645 Silicon PNP Transistor General Purpose Amp Absolute Maximum Ratings: Collector Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175V CBO Collector Emitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175V CEO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EBO Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A C Total Power Dissipation, P T T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W A Derate linearly . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.71mW/ C T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0W C Derate linearly . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28.6mW/ C Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Breakdown Current V I = 10mA 175 V (BR)CEO C CollectorBase Cutoff Current I V = 100V 100 nA CBO CB EmitterBase Cutoff Current I V = 3V 50 nA EBO EB V = 5V 10 A EB CollectorEmitter Cutoff Current I V = 100V 10 A CEO CE ON Characteristics (Note 1) ForwardCurrent Transfer Ratio h V = 10V I = 0.1mA 55 FE CE C I = 1.0mA 90 C I = 10mA 100 C I = 50mA 100 300 C I = 150mA 60 C CollectorEmitter Saturation Voltage V I = 10mA, I = 1.0mA 0.3 V CE(sat) C B I = 50mA, I = 5.0mA 0.6 V C B BaseEmitter Saturation Voltage V I = 10mA, I = 1.0mA 0.8 V BE(sat) C B I = 50mA, I = 5.0mA 0.65 0.9 V C B Note 1. Pulse test: Pulse Width = 300s, Duty Cycle 2.0%.Electrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Dynmic Characteristics Forward Current Transfer Ratio h I = 30mA, V = 30V, f = 100MHz 2.0 5.8 fe C CE h I = 10mA, V = 10V, f = 1.0kHz 80 320 fe C CE SmallSignal ShortCircuit Input Impedance h I = 10mA, V = 10V, f = 1.0kHz 200 1200 je C CE SmallSignal OpenCircuit Output h I = 10mA, V = 10V, f = 1.0kHz 200 s oe C CE Admittance Output Capacitance C V = 20V, I = 0, 10 pF obo CB E 100kHz f 1.0MHz Input Capacitance C V = 1.0V, I = 0, 75 pF ibo EB C 100kHz f 1.0MHz Noise Figure NF f = 100Hz 5.0 dB f = 1.0kHz 3.0 dB f = 10kHz 3.0 dB .370 (9.39) Dia Max .355 (9.03) Dia Max .260 (6.6) Max .500 (12.7) Min .018 (0.45) Dia Base Emitter Collector 45 .031 (.793)

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NTE ELECTRONICS may also be referenced as

NTE ELECTRONICS, INC.

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