NTE2645 Silicon PNP Transistor General Purpose Amp Absolute Maximum Ratings: Collector Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175V CBO Collector Emitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175V CEO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EBO Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A C Total Power Dissipation, P T T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W A Derate linearly . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.71mW/ C T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0W C Derate linearly . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28.6mW/ C Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Breakdown Current V I = 10mA 175 V (BR)CEO C CollectorBase Cutoff Current I V = 100V 100 nA CBO CB EmitterBase Cutoff Current I V = 3V 50 nA EBO EB V = 5V 10 A EB CollectorEmitter Cutoff Current I V = 100V 10 A CEO CE ON Characteristics (Note 1) ForwardCurrent Transfer Ratio h V = 10V I = 0.1mA 55 FE CE C I = 1.0mA 90 C I = 10mA 100 C I = 50mA 100 300 C I = 150mA 60 C CollectorEmitter Saturation Voltage V I = 10mA, I = 1.0mA 0.3 V CE(sat) C B I = 50mA, I = 5.0mA 0.6 V C B BaseEmitter Saturation Voltage V I = 10mA, I = 1.0mA 0.8 V BE(sat) C B I = 50mA, I = 5.0mA 0.65 0.9 V C B Note 1. Pulse test: Pulse Width = 300s, Duty Cycle 2.0%.Electrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Dynmic Characteristics Forward Current Transfer Ratio h I = 30mA, V = 30V, f = 100MHz 2.0 5.8 fe C CE h I = 10mA, V = 10V, f = 1.0kHz 80 320 fe C CE SmallSignal ShortCircuit Input Impedance h I = 10mA, V = 10V, f = 1.0kHz 200 1200 je C CE SmallSignal OpenCircuit Output h I = 10mA, V = 10V, f = 1.0kHz 200 s oe C CE Admittance Output Capacitance C V = 20V, I = 0, 10 pF obo CB E 100kHz f 1.0MHz Input Capacitance C V = 1.0V, I = 0, 75 pF ibo EB C 100kHz f 1.0MHz Noise Figure NF f = 100Hz 5.0 dB f = 1.0kHz 3.0 dB f = 10kHz 3.0 dB .370 (9.39) Dia Max .355 (9.03) Dia Max .260 (6.6) Max .500 (12.7) Min .018 (0.45) Dia Base Emitter Collector 45 .031 (.793)