X-On Electronics has gained recognition as a prominent supplier of NTE2642 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE2642 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NTE2642 NTE

NTE2642 electronic component of NTE
Images are for reference only
See Product Specifications
Part No.NTE2642
Manufacturer: NTE
Category: Bipolar Transistors - BJT
Description: Transistor: NPN; bipolar; 600V; 16A; 65W; TO3PF
Datasheet: NTE2642 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
4: USD 15.785 ea
Line Total: USD 63.14 
Availability - 3
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ: 4  Multiples: 1
Pack Size: 1
Availability Price Quantity
3
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 4
Multiples : 1
4 : USD 15.785
5 : USD 14.35
25 : USD 11.8125
50 : USD 11.625
100 : USD 11.1
250 : USD 10.4625
500 : USD 10.1625
1000 : USD 9.8875

   
Manufacturer
Product Category
Polarisation
Mounting
Case
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Power Dissipation
Current Gain
Frequency
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We are delighted to provide the NTE2642 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE2642 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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NTE2642 Silicon NPN Transistor Horizontal Deflection Output High Speed Switch TO3P Full Pack Features: High Breakdown Voltage High Reliability High Speed Switching Wide Area of Safe Operation (ASO) Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Collector Base Voltage, V ..................................................... 1700V CBO Collector Emitter Voltage, V .................................................... 1700V CES Collector Emitter Voltage, V ..................................................... 600V CEO EmitterBase Voltage, V .......................................................... 7V EBO Collector Current, I C Continuous DC .............................................................. 16A Pulse ....................................................................... 30A Base Current, I .................................................................... 8A B Collector Power Dissipation, P C T = +25C ................................................................. 65W C T = +25C ................................................................. 3.5W A Operating Junction Temperature, T ............................................... +150C J Storage Temperature Range, T .......................................... 55 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 1000V, I = 0 50 A CBO CB E V = 1700V, I = 0 1 mA CB E Emitter Cutoff Current I V = 7V, I = 0 50 A EBO EB C DC Current Gain h V = 5V, I = 8A 6 12 FE CE C CollectorEmitter Saturation Voltage V I = 8A, I = 2A 3 V CE(sat) C B BaseEmitter Saturation Voltage V I = 8A, I = 2A 1.5 V BE(sat) C B Transition Frequency f V = 10V, I = 0.1A, f = 0.5MHz 3 MHz T CE C Rev. 311Electrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Switching Time Storage Time t I = 8A, Resistance loaded, 3.0 s stg C I = 2A, I = 4A B1 B2 Fall Time t 0.2 s f .217 (5.5) .118 (3.0) .610 (15.5) .177 Isol (4.5) .441 (11.2) .965 .906 (24.5) (23.0) B C E 1.709 (43.4) Max .079 (2.0) .429 (10.9)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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