X-On Electronics has gained recognition as a prominent supplier of NTE261 Darlington Transistors across the USA, India, Europe, Australia, and various other global locations. NTE261 Darlington Transistors are a product manufactured by NTE. We provide cost-effective solutions for Darlington Transistors, ensuring timely deliveries around the world.

NTE261 NTE

NTE261 electronic component of NTE
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See Product Specifications
Part No.NTE261
Manufacturer: NTE
Category: Darlington Transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 65W; TO220
Datasheet: NTE261 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.601 ea
Line Total: USD 3.6 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 20
Multiples : 1
20 : USD 3.51
50 : USD 2.1384
100 : USD 1.9332
200 : USD 1.7928
500 : USD 1.674

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 3.0492
5 : USD 3.019
10 : USD 2.9887
25 : USD 2.9585
50 : USD 2.9295
100 : USD 2.8993
500 : USD 2.8703
1000 : USD 2.8426
5000 : USD 2.8136

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 3.601
3 : USD 3.237
7 : USD 2.561
18 : USD 2.418

   
Manufacturer
Product Category
Polarisation
Case
Mounting
Kind Of Transistor
Kind Of Package
Type Of Transistor
Collector Current
Collector-Emitter Voltage
Power Dissipation
Current Gain
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE261 from our Darlington Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE261 and other electronic components in the Darlington Transistors category and beyond.

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NTE261 (NPN) & NTE262 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE261 (NPN) and NTE262 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and lowspeed switching applications. Features: High DC Current Gain: h = 2500 Typ I = 4A FE C CollectorEmitter Sustaining Voltage: V = 100V Min 100mA CEO(sus) Low CollectorEmitter Saturation Voltage: V = 2V Max I = 3A CE(sat) C = 4V Max I = 5A C Monolithic Construction with BuiltIn BaseEmitter Shunt Resistor Absolute Maximum Ratings: CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V CEO CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V CB EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EB Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120mA B Total Power Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65W C D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.52W/C Total Power Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W A D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.016W/C Unclamped Inductive Load Energy (Note 1), E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mJ Operating Junction Temperature range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C stg Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.92C/W thJC Thermal Resistance, JunctiontoAmbient, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5C/W thJA Note 1. I = 1A, L = 100mH, P.R.F. = 10Hz, V = 20V, R = 100 . C CC BEElectrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Sustaining Voltage V I = 100mA, I = 0, Note 2 100 V CEO(sus) C B Collector Cutoff Current I V = 50V, I = 0 0.5 mA CEO CE B I V = 100V, I = 0 0.2 mA CBO CB E Emitter Cutoff Current I V = 5V, I = 0 2.0 mA EBO BE C ON Characteristics (Note 2) DC Current Gain h I = 0.5A, V = 3V 1000 FE C CE I = 3A, V = 3V 1000 C CE CollectorEmitter Saturation Voltage V I = 3A, I = 12mA 2.0 V CE(sat) C B I = 5A, I = 20mA 4.0 V C B BaseEmitter ON Voltage V I = 3A, V = 3V 2.5 V BE(on) C CE Dynamic Characteristics SmallSignal Current Gain h I = 3A, V = 4V, f = 1MHz 4.0 fe C CE Output Capacitance C ob NTE261 V = 10V, I = 0, f = 0.1MHz 300 pF CB E NTE262 200 pF Note 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. NTE261 .420 (10.67) Max C .110 (2.79) B .147 (3.75) .500 Dia Max (12.7) E Min .250 (6.35) Max NTE262 .500 (12.7) Max .070 (1.78) Max C B Base Emitter Collector/Tab .100 (2.54) E

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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