NTE261 (NPN) & NTE262 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE261 (NPN) and NTE262 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and lowspeed switching applications. Features: High DC Current Gain: h = 2500 Typ I = 4A FE C CollectorEmitter Sustaining Voltage: V = 100V Min 100mA CEO(sus) Low CollectorEmitter Saturation Voltage: V = 2V Max I = 3A CE(sat) C = 4V Max I = 5A C Monolithic Construction with BuiltIn BaseEmitter Shunt Resistor Absolute Maximum Ratings: CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V CEO CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V CB EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EB Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120mA B Total Power Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65W C D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.52W/C Total Power Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W A D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.016W/C Unclamped Inductive Load Energy (Note 1), E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mJ Operating Junction Temperature range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C stg Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.92C/W thJC Thermal Resistance, JunctiontoAmbient, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5C/W thJA Note 1. I = 1A, L = 100mH, P.R.F. = 10Hz, V = 20V, R = 100 . C CC BEElectrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Sustaining Voltage V I = 100mA, I = 0, Note 2 100 V CEO(sus) C B Collector Cutoff Current I V = 50V, I = 0 0.5 mA CEO CE B I V = 100V, I = 0 0.2 mA CBO CB E Emitter Cutoff Current I V = 5V, I = 0 2.0 mA EBO BE C ON Characteristics (Note 2) DC Current Gain h I = 0.5A, V = 3V 1000 FE C CE I = 3A, V = 3V 1000 C CE CollectorEmitter Saturation Voltage V I = 3A, I = 12mA 2.0 V CE(sat) C B I = 5A, I = 20mA 4.0 V C B BaseEmitter ON Voltage V I = 3A, V = 3V 2.5 V BE(on) C CE Dynamic Characteristics SmallSignal Current Gain h I = 3A, V = 4V, f = 1MHz 4.0 fe C CE Output Capacitance C ob NTE261 V = 10V, I = 0, f = 0.1MHz 300 pF CB E NTE262 200 pF Note 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. NTE261 .420 (10.67) Max C .110 (2.79) B .147 (3.75) .500 Dia Max (12.7) E Min .250 (6.35) Max NTE262 .500 (12.7) Max .070 (1.78) Max C B Base Emitter Collector/Tab .100 (2.54) E