NTE2635 Silicon NPN Transistor w Horizontal Deflection /Internal Damper Diode Description: The NTE2635 is an enhanced performance, new generation, highvoltage, highspeed switching NPN transistor with an integrated damper diode in a fullpack envelope intended for use in horizontal deflection circuits in color TV receivers. This device features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. Absolute Maximum Ratings: CollectorEmitter Voltage (V = 0V), V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V BE CESM CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V CEO Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Base Current, I B Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A Reverse Base Current, I B Continuous (Average over any 20ms period) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Peak (TurnOff Current) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Total Power Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35W C tot Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C stg Thermal Resistance, JunctiontoCase (With Heat Sink Compound), R . . . . . . . . . . . . . 3.6K/W thJC Typical Thermal Resistance, JunctiontoAmbient, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55K/W thJA Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Isolation Limiting Value RMS Isolation Voltage from all V f = 5060hz, Sinusoidal Waveform, 2500 V ISOL Three Terminals to Case R.H. 65%, Clean and Dustfree Capacitance from T2 to External C f = 1MHz 10 pF ISOL Heat Sink Static Characteristics Collector Cutoff Current I V = 1500V, V = 0, Note 1 1.0 mA CES CE BE V = 1500V, V = 0, T = +125C, 2.0 mA CE BE J Note 1 Note 1. Measured with half sinewave voltage (curve tracer).Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics (Contd) Emitter Cutoff Current I V = 7.5V, I = 0 140 390 mA EBO EB C EmitterBase Breakdown Voltage V I = 600mA 7.5 13.5 V (BR)EBO B BaseEmitter Resistance R V = 7.5V 33 be EB CollectorEmitter Sustaining Voltage V I = 0, I = 100mA, L = 25mH 700 V CEO(sus) B C CollectorEmitter Saturation Voltage V I = 4.5A, I = 1.1A 5.0 V CE(sat) C B I = 4.5A, I = 1.29A 1.0 V C B BaseEmitter Saturation Voltage V I = 4.5A, I = 1.7A 1.3 V BE(sat) C B DC Current Gain h I = 1A, V = 5V 7 13 23 FE C CE I = 4.5A, V = 1V 4.0 5.5 7.5 C CE Diode Forward Voltage V I = 4.5A 1.6 2.0 V F F Dymanic Characteristics Collector Capacitance C I = 0, V = 10V, f = 1MHz 80 pF c E CB TurnOff Storage Time t I = 4.5A Peak, I = 1.1A, 5.0 6.0 s s C B(end) L = 6 H, V = 4V, B BB TurnOff Fall Time t 0.4 0.6 s f (dI /dt = 0.6A/ s) B .181 (4.6) .126 (3.2) Dia Max Max .114 (2.9) .405 (10.3) Max Isol .252 (6.4) COLLECTOR .622 (15.0) Max BASE BC E .118 EMITTER (3.0) Max .531 (13.5) Min .098 (2.5) .100 (2.54)