NTE2637 Silicon NPN Transistor CRT Horizontal Deflection, High Voltage, Fast Switching TO3P Full Pack Features: High Breakdown Voltage Capability Fully Insulated Package for Easy Mounting Low Saturation Voltage High Switching Speed Applications: Horizontal Deflection Stage in Standard and High Resolution Displays for TVs and Monitors Switching Power Supply for TVs and Monitors Absolute Maximum Ratings: Collector Base Voltage (I = 0), V .............................................. 1700V E CBO Collector Emitter Voltage (I = 0), V .............................................. 700V B CEO EmitterBase Voltage (I = 0), V .................................................. 10V C EBO Collector Current, I C Continuous ................................................................... 8A Peak (t < 5ms) .............................................................. 15A p Base Current, I B Continuous ................................................................... 5A Peak (t < 5ms) ............................................................... 8A p Total Dissipation (T = +25C), P .................................................. 60W C tot Maximum Operating Junction Temperature, T ...................................... +150C J Storage Temperature Range, T .......................................... 65 to +150C stg Maximum Thermal Resistance, Junction toCase, R ........................... 2.08C/W thJC Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 1700V, 1 mA CES CE V = 0 BE T = +125C 2 mA J Emitter Cutoff Current I V = 5V, I = 0 100 A EBO EB C Rev. 311Electrical Characteristics (Contd): (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit CollectorEmitter Sustaining Voltage V I = 100mA 700 V CEO(sus) C EmitterBase Voltage V I = 10mA, I = 0 10 V EBO E C CollectorEmitter Saturation Voltage V I = 5A, I = 1.25A, Note 1 1.5 V CE(sat) C B BaseEmitter Saturation Voltage V I = 5A, I = 1.25A, Note 1 1.3 V BE(sat) C B DC Current Gain h 6 I = 5A, V = 5V, FE C CE Note 1 T = +100C 4 J Resistive Load Storage Time t 2.7 3.9 s V = 400V, I = 5A, I = 1.25A, s CC C B1 I = 2.5A B2 Fall Time t 190 280 ns f Resistive Load Storage Time t I = 5A, f = 15625Hz, I = 1.25A, 2.3 s s C B1 I = 2.5A, B2 6 Fall Time t 350 ns f V = 1050 sin(/10 10 )t V ceflyback Storage Time t 2.3 s I = 5A, f = 31250Hz, I = 1.25A, s C B1 I = 2.5A, B2 6 Fall Time t 200 ns f V = 1200 sin(/10 10 )t V ceflyback Note 1. Pulsed: Pulse Duration = 300s, Duty Cycle = 1.5%. .217 (5.5) .118 (3.0) .610 (15.5) .177 Isol (4.5) .441 (11.2) .965 .906 (24.5) (23.0) B C E 1.709 .079 (43.4) (2.0) Max .429 (10.9)