X-On Electronics has gained recognition as a prominent supplier of NTE2537 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE2537 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NTE2537 NTE

NTE2537 electronic component of NTE
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See Product Specifications
Part No.NTE2537
Manufacturer: NTE
Category: Bipolar Transistors - BJT
Description: Transistor: PNP; bipolar; 100V; 40A; 150W; TO3P
Datasheet: NTE2537 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
4: USD 17.9212 ea
Line Total: USD 71.68 
Availability - 0
MOQ: 4  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 03 Dec to Mon. 09 Dec
MOQ : 4
Multiples : 1
4 : USD 17.9212
50 : USD 11.5344
100 : USD 10.6488
200 : USD 9.882
500 : USD 9.2232

0
Ship by Fri. 29 Nov to Tue. 03 Dec
MOQ : 1
Multiples : 1
1 : USD 20.6253
2 : USD 13.5421
4 : USD 12.8093

   
Manufacturer
Product Category
Polarisation
Mounting
Case
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Power Dissipation
Current Gain
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE2537 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE2537 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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NTE2536 (NPN) & NTE2537 (PNP) Silicon Complementary Transistors High Current Switch Features: High Current Capacity Wide ASO Range Low Saturation Voltage Applications: Motor Drivers Relay Drivers Converters Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Collector Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110V CBO Collector Emitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V CEO Emitter Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V EBO Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65A Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A B Collector Power Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W C C Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 100V, I = 0 0.1 mA CBO CB E Emitter Cutoff Current I V = 5V, I = 0 0.1 mA EBO EB C DC Current Gain h V = 2V, I = 4A 50 140 FE CE C V = 2V, I = 16A 20 CE C Collector Emitter Saturation Volt- V I = 16A, I = 1.6A 0.8 V CE(sat) C B age Base Emitter Saturation Voltage V I = 16A, I = 1.6A 1.5 V BE(sat) C B Collector Base Breakdown Voltage V I = 1mA, I = 0 110 V (BR)CBO C E Collector Emitter Breakdown Voltage V I = 5mA, R = 100 V (BR)CEO C BE Emitter Base Breakdown Voltage V I = 1mA, I = 0 6 V (BR)EBO E C.190 (4.82) .615 (15.62) C .787 (20.0) .591 .126 (15.02) (3.22) Dia .787 (20.0) BC E .215 (5.47)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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