X-On Electronics has gained recognition as a prominent supplier of NTE2536 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE2536 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NTE2536 NTE

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Part No.	NTE2536
Manufacturer:	NTE
Category:	Bipolar Transistors - BJT
Description:	Transistor: NPN; bipolar; 100V; 40A; 150W; TO3P
Datasheet:	NTE2536 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

5: USD 14.4675 ea
Line Total: USD 72.34

Availability - 0

MOQ: 5 Multiples: 1
Pack Size: 1

NTE2536 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Fri. 29 Nov to Thu. 05 Dec MOQ : 5 Multiples : 1	5 : USD 14.4675 50 : USD 9.3204 100 : USD 8.5968 200 : USD 7.9812 500 : USD 7.452

0 Ship by Wed. 27 Nov to Fri. 29 Nov MOQ : 1 Multiples : 1	1 : USD 16.6901 2 : USD 10.9503 4 : USD 10.3533

Specifications

Manufacturer NTE NTE
Product Category Bipolar Transistors - BJT Bipolar Transistors - BJT
Polarisation Bipolar Bipolar
Mounting Tht Tht
Case To3p To3p
Type Of Transistor Npn Npn
Collector-Emitter Voltage 100 V 100 V
Collector Current 40 A 40 A
Power Dissipation 150 W 150 W
Current Gain 20 To 140 20 To 140

We are delighted to provide the NTE2536 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE2536 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

NTE2536 (NPN) & NTE2537 (PNP) Silicon Complementary Transistors High Current Switch Features: High Current Capacity Wide ASO Range Low Saturation Voltage Applications: Motor Drivers Relay Drivers Converters Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Collector Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110V CBO Collector Emitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V CEO Emitter Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V EBO Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65A Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A B Collector Power Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W C C Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 100V, I = 0 0.1 mA CBO CB E Emitter Cutoff Current I V = 5V, I = 0 0.1 mA EBO EB C DC Current Gain h V = 2V, I = 4A 50 140 FE CE C V = 2V, I = 16A 20 CE C Collector Emitter Saturation Volt- V I = 16A, I = 1.6A 0.8 V CE(sat) C B age Base Emitter Saturation Voltage V I = 16A, I = 1.6A 1.5 V BE(sat) C B Collector Base Breakdown Voltage V I = 1mA, I = 0 110 V (BR)CBO C E Collector Emitter Breakdown Voltage V I = 5mA, R = 100 V (BR)CEO C BE Emitter Base Breakdown Voltage V I = 1mA, I = 0 6 V (BR)EBO E C.190 (4.82) .615 (15.62) C .787 (20.0) .591 .126 (15.02) (3.22) Dia .787 (20.0) BC E .215 (5.47)

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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