NTE2539 Silicon NPN Transistor High Voltage, High Speed Switch Features: High Breakdown Voltage and Reliability Fast Switching Speed Wide ASO Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V CBO CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V CEO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V EBO Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40A Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A B Collector Dissipation, P D T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5W A T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160W C Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Note 1. Pulse Test: Pulse Width 300 s, Duty Cycle 10%. Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 400V, I = 0 10 A CBO CB E Emitter Cutoff Current I V = 5V, I = 0 10 A EBO EB C DC Current Gain h V = 5V, I = 3.2A 15 50 FE CE C V = 5V, I = 16A 10 CE C V = 5V, I = 10mA 10 CE C CollectorEmitter Saturation Voltage V I = 16A, I = 3.2A 0.8 V CE(sat) C B BaseEmitter Saturation Voltage V I = 16A, I = 3.2A 1.5 V BE(sat) C BElectrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit GainBandwidth Product f V = 10V, I = 3.2A 20 MHz T CE C Output Capacitance C V = 10V, f = 1MHz 300 pF ob CB CollectorBase Breakdown Voltage V I = 1mA, I = 0 500 V (BR)CBO C E CollectorEmitter Breakdown Voltage V I = 10mA, R = 400 V (BR)CEO C BE EmitterBase Breakdown Voltage V I = 1mA, I = 0 7 V (BR)EBO E C CollectorEmitter Sustaining Voltage V I = 10A, I = 1A, I = 4A, 400 V CEX(sus) C B1 B2 L = 200 H Clamped TurnOn Time t I = 20A, I = 4A, I = 8A, 0.5 s on C B1 B2 R = 10 , V = 200V L CC Storage Time t 2.5 s stg Fall Time t 0.3 s f .190 (4.82) .615 (15.62) C .787 (20.0) .591 .126 (15.02) (3.22) Dia .787 (20.0) BC E .215 (5.47)