NTE2530 (NPN) & NTE2531 (PNP) Silicon Complementary Transistors High Voltage Driver TO251 Features: High Current Capacity: I = 2A C High Breakdown Voltage: V = 400V Min CEO TO251 Type Package Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Collector Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V CBO Collector Emitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V CEO Emitter Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EBO Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Collector Power Dissipation, P C T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W A T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15W C Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 300V, I = 0 1.0 A CBO CB E Emitter Cutoff Current I V = 4V, I = 0 1.0 A EBO EB C DC Current Gain h V = 10V, I = 100mA 40 200 FE CE C GainBandwidth Product f T NTE2530 V = 10V, I = 100mA 60 MHz CE C NTE2531 40 MHz CollectorEmitter Saturation Voltage V I = 500mA, I = 50mA 1.0 V CE(sat) C B BaseEmitter Saturation Voltage V I = 500mA, I = 50mA 1.0 V BE(sat) C B CollectorBase Breakdown Voltage V I = 10A, I = 0 400 V (BR)CBO C E CollectorEmitter Breakdown Voltage V I = 1mA, R = 400 V (BR)CEO C BE Emitter Base Breakdown Voltage V I = 10A, I = 0 5 V (BR)EBO E C Rev. 810Electrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Output Capacitance C ob NTE2530 V = 30V, f = 1MHz 15 pF CB NTE2531 25 pF TurnOn Time NTE2530 t V = 150V, V = 5V, 0.085 s on CC BE 10I = 10I = I = 500mA, B1 B2 C NTE2531 0.12 s R = 300, R = 20, L B at I = 500mA, Storage Time t C stg Pulse Width = 20s, NTE2530 4.0 s Duty Cycle 1%, Note 1 NTE2531 3.0 s Fall Time t f NTE2530 0.6 s NTE2531 0.3 s Note 1. For NTE2531, the polarity is reversed. .256 (6.5) .090 (2.3) .002 (0.5) .197 (5.0) .059 (1.5) C .275 (7.0) BC E .295 (7.5) .002(0.5) .090 (2.3)