NTE2357 (NPN) & NTE2358 (PNP) Silicon Complementary Transistors w Digital /2 BuiltIn 22k Bias Resistors Features: BuiltIn Bias Resistor (R = 22k , R = 22k ) 1 2 SmallSized Package (TO92 type) Applications: Switching Circuit Inverter Interface Circuit Driver Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Collector to Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V CBO Collector to Emitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V CEO Emitter to Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V EBO Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA Collector Dissipation, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW C Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +160C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 40V, I = 0 0.1 A CBO CB E I V = 40V, I = 0 0.5 A CEO CE B Emitter Cutoff Current I V = 5V, I = 0 70 113 150 A EBO EB C DC Current Gain h V = 5V, I = 5mA 50 FE CE C Gain Bandwidth Product f V = 10V, I = 5mA T CE C NTE2357 250 MHz NTE2358 200 MHz Output Capacitance C V = 10V, f = 1MHz ob CB NTE2357 3.7 pF NTE2358 5.5 pFElectrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit CollectorEmitter Saturation Voltage V I = 10mA, I = 0.5mA 0.1 0.3 V CE(sat) C B CollectorBase Breakdown Voltage V I = 10 A, I = 0 50 V (BR)CBO C E CollectorEmitter Breakdown Voltage V I = 100 A, R = 50 V (BR)CEO C BE Input OFF Voltage V V = 5V, I = 100 A 0.8 1.1 1.5 V I(off) CE C Input ON Voltage V V = 200mV, I = 5mA 1.0 1.9 3.0 V I(on) CE C Input Resistance R 15 22 29 k 1 Input Resistance Ratio R /R 0.9 1.0 1.1 1 2 Schematic Diagram Collector Collector (Output) (Output) R R 1 1 Base Base (Input) (Input) R R 2 2 Emitter Emitter (GND) (GND) NPN PNP .165 (4.2) Max .126 (3.2) Max .071 (1.8) .500 (12.7) Max EC B .035 (0.9) .050 (1.27) .050 (1.27) .102 (2.6) Max