NTE218 Silicon PNP Transistor Audio Power Output Description: The NTE218 is ideal for use as a driver, switch and mediumpower amplifier applications. This device features: Features: Low Saturation Voltage 0.6V (sat) I = 1A CE C High Gain Characteristics h I = 250mA: 30100 FE C Excellent Safe Area Limits Absolute Maximum Ratings: CollectorEmitter Voltage, V ...................................................... 80V CEO Collector Base Voltage, V ......................................................... 80V CB EmitterBase Voltage, V ........................................................... 7V EB Collector Current, I C Continuous ................................................................... 4A Peak (Note 1) ................................................................ 10A Base Current, I ................................................................... 2.A B Total Device Dissipation (T = +25C), P 25W........................................... C D Derate above 25C 0.143W/.................................................... C Operating Junction Temperature Range, T .................................. 65 to +200C J Storage Temperature Range, T .......................................... 65 to +200C stg Note 1 Pulse Test: Pulse Width 300s, Duty Cycle 2.0%. Electrical Characteristics: (T = +25C unless otherwise sepcified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics ColectorEmitter Sustaining Voltage V I = 100mA, I = 0, Note 1 80 V CEO(sus) C B Emitter Cutoff Current I V = 7V 0.5 mA EBO EB Collector Cutoff Current I V = 80V, V = 1.5V 100 A CEX CE BE(off) V = 60V, V = 1.5V, T = +150C 1.0 mA CE BE(off) C I V = 60V, I = 0 1.0 mA CEO CE B I V = 80V, I = 0 100 A CBO CB E Rev. 312Electrical Characteristics (Contd): (T = +25C unless otherwise sepcified) C Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics (Note 1) DC Current Gain h V = 1V, I = 100mA 40 FE CE C V = 1V, I = 250mA 30 100 CE C V = 1V, I = 500mA 20 CE C V = 1V, I = 1A 10 CE C CollectorEmitter Saturation Voltage V I = 1A, I = 125mA 0.6 V CE(sat) C B BaseEmitter Voltage V V = 1V, I = 250mA 1.0 V BE CE C Transient Characteristics Current Gain Bandwidth Product f V = 1V, I = 250mA, f = 1MHz 3 MHz T CE C Common Base Output Capacitance C V = 10V, I = 0, f = 100kHz 100 pF ob CE C SmallSignal Current Gain h V = 10V, I = 50mA, f = 1kHz 25 fe CE C Note 1 Pulse Test: Pulse Width 300s, Duty Cycle 2.0%. .295 (7.5) .485 (12.3) Dia .062 (1.57) .031 (0.78) Dia .360 (9.14) Min .960 (24.3) Base .580 (14.7) .147 (3.75) Dia (2 Places) .200 (5.08) .145 (3.7) R Max Collector/Case Emitter