NTE2334 Silicon NPN Transistor w Darlington Driver /Internal Damper and Zener Diode Description: The NTE2334 is a silicon Darlington NPN Driver with an internal damper and zener diode in a TO220 type package designed for use in applications such as the switching of the L load of a motor driver, hammer driver, relay driver, etc. Features: High DC Current Gain Large Current Capacity and Wide ASO Contains 60 10V Avalanche Diode between Collector and Base High 50mJ Reverse Energy Rating Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Collector to Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 10V CBO Collector to Emitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 10V CEO Emitter to Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V EBO Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA B Collector Power Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W C C Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 40V, I = 0 100 A CBO BE E Emitter Cutoff Current I V = 5V, I = 0 3 mA EBO EB C DC Current Gain h V = 3V, I = 2.5A 1000 4000 FE CE C Gain Bandwidth Product f V = 5V, I = 2.5A 20 MHz T CE CElectrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit CollectorEmitter Saturation Voltage V I = 2.5A, I = 5mA 0.9 1.5 V CE(sat) C B BaseEmitter Saturation Voltage V I = 2.5A, I = 5mA 2.0 V BE(sat) C B CollectorBase Breakdown Voltage V I = 5mA, I = 0 50 60 70 V (BR)CBO C E CollectorEmitter Breakdown Voltage V I = 50mA, R = 50 60 70 V (BR)CEO C BE Unclamped Inductive Load Energy E L = 100mH, R = 100 50 mJ s/b BE TurnOn Time t V = 20V, I = 3A, 0.6 s on CC C I = I = 6mA B1 B2 Storage Time t 4.0 s stg Fall Time t 1.5 s f .420 (10.67) Max .110 (2.79) .147 (3.75) .500 Dia Max C (12.7) Max B .250 (6.35) E Max .500 (12.7) Min .070 (1.78) Max Base Emitter .100 (2.54) Collector/Tab