NTE2343 (NPN) & NTE2344 (PNP) Silicon Complementary Transistors Darlington Power Amp, Switch Absolute Maximum Ratings: CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V CBO CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V CEO Collector Current, I C DC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A Pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA B Collector Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80W C C Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C stg Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.56C/W thJC Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit CollectorEmitter Sustaining Voltage V I = 100mA, I = 0, Note 1 100 V CEO(sus) C B Collector Cutoff Current I V = 100V, I = 0 100 A CBO CB E I V = 100V, I = 0 1 mA CEO CE B Emitter Cutoff Current I V = 5V, I = 0 2 mA EBO EB C DC Current Gain h V = 3V, I = 3A 1000 FE CE C V = 3V, I = 5A 750 1000 CE C V = 3V, I = 10A 100 CE C CollectorEmitter Saturation Voltage V I = 5A, I = 20mA, Note 1 2.0 V CE(sat) C B I = 10A, I = 100mA, Note 1 3.0 V C B BaseEmitter Saturation Voltage V I = 5A, I = 20mA, Note 1 2.5 V BE(sat) C B I = 10A, I = 100mA, Note 1 4.0 V C B Parallel Diode Forward Voltage V I = 5A, Note 1 1.3 2.0 V f f I = 10A, Note 1 1.8 4.0 V f SmallSignal Current Gain h I = 1A, V = 10V, f = 1MHz 20 fe C CE Note 1. Pulse Test: Pulse Width = 300 s, Duty Cycle = 1.5%.NTE2343 NTE2344 (NPN) (PNP) C C B B E E .420 (10.67) Max .110 (2.79) .147 (3.75) .500 Dia Max (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Base Emitter .100 (2.54) Collector/Tab