NTE2426 (NPN) & NTE2427 (PNP) Silicon Complementary Transistors Darlington Switch Description: The NTE2426 and NTE2427 are silicon planer Darlington transistors in a SOT89 type surface mount package designed for use in industrial switching applications such as print hammer, solenoid, relay, and lamp drivers. Absolute Maximum Ratings: CollectorBase Voltage (Open Emitter), V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V CBO CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V CER EmitterBase Voltage (Open Collector), V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EBO Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA B Total Power Dissipation (T +25C, Note 1), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W A tot Operating Junction Temperature (Note 2), T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C stg Thermal Resistance, JunctiontoAmbient (Note 1, Note 2), R . . . . . . . . . . . . . . . . . . . . 125K/W thJA Thermal Resistance, JunctiontoTab (Note 2), R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10K/W thJTAB 2 Note 1. Device mounted on a ceramic substrate area = 2.5cm , thickness = 0.7mm. Note 2. Based on maximum average junction temperature in line with common industrial practice. The resulting higher junction teperature of the output transistor part is taken into account. Electrical Characteristics: (T = +25C unles otherwise specified) J Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 80V, V = 0 10 A CES CER BE Emitter Cutoff Current I V = 4V, I = 0 10 A EBO EB C DC Current Gain h V = 10V, I = 150mA, Note 3 1000 FE CE C V = 10V, I = 500mA, Note 3 2000 CE C Note 3. Measured under pulsed conditions.Electrical Characteristics (Contd): (T = +25C unles otherwise specified) J Parameter Symbol Test Conditions Min Typ Max Unit CollectorEmitter Saturation Voltage V I = 500mA, I = 0.5mA 1.3 V CE(sat) C B I = 500mA, I = 0.5mA, T = +150C 1.3 V C B J BaseEmitter Saturation Voltage V I = 500mA, I = 0.5mA 1.9 V BE(sat) C B TurnOn Time t I = 500mA, I = I = 0.5mA 400 ns on C Bon Boff TurnOff Time t 1500 ns off Schematic Diagram NTE2426 NTE2427 NPN PNP C C B B E E .174 (4.42) .059 (1.5) .067 (1.7) .096 (2.46) .161 (4.1) .041 EC B (1.05) Min .015 (0.32) .020 (.508) .059 (1.5) .118 (3.0) Bottom View