X-On Electronics has gained recognition as a prominent supplier of NTE2429 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE2429 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NTE2429 NTE

NTE2429 electronic component of NTE
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See Product Specifications
Part No.NTE2429
Manufacturer: NTE
Category: Bipolar Transistors - BJT
Description: Transistor: PNP; bipolar; 80V; 1A; 1W; SOT89
Datasheet: NTE2429 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10: USD 3.3625 ea
Line Total: USD 33.62 
Availability - 19
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ: 10  Multiples: 1
Pack Size: 1
Availability Price Quantity
19
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 10
Multiples : 1
10 : USD 3.3625
100 : USD 2.675
250 : USD 2.5875
500 : USD 2.5125
1000 : USD 2.375
2500 : USD 2.3125
5000 : USD 2.275
7500 : USD 2.2375

   
Manufacturer
Product Category
Polarisation
Mounting
Case
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Power Dissipation
Current Gain
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE2429 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE2429 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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NTE2428 (NPN) & NTE2429 (PNP) Silicon Complementary Transistors General Purpose Switch Description: The NTE2428 and NTE2429 are silicon complementary transistors in a SOT89 type surface mount package designed for use in thick and thin film circuits. Typical applications include telephone and general industrial. Absolute Maximum Ratings: CollectorBase Voltage (Open Emitter), V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V CBO CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V CER EmitterBase Voltage (Open Collector), V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EBO DC Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A C DC Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA B Total Power Dissipation (T +25C, Note 1), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W A tot Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C stg Thermal Resistance, JunctiontoAmbient (Note 1), R . . . . . . . . . . . . . . . . . . . . . . . . . . . 125K/W thJA Thermal Resistance, JunctiontoTab, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10K/W thJTAB 2 Note 1. Device mounted on a ceramic substrate area = 2.5cm , thickness = 0.7mm. Electrical Characteristics: (T = +25C unles otherwise specified) J Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 60V, I = 0 100 nA CBO CB E V = 60V, I = 0, T = +150C 50 A CB E J CollectorEmitter Breakdown Voltage V I = 10mA, I = 0 80 V (BR)CEO C B V I = 10 A, V = 0 90 V (BR)CES C BE EmitterBase Breakdown Voltage V I = 10 A, I = 0 5 V (BR)EBO E C CollectorEmitter Saturation Voltage V I = 150mA, I = 15mA, Note 2 250 mV CE(sat) C B I = 500mA, I = 50mA, Note 2 500 mV C B BaseEmitter Saturation Voltage V I = 150mA, I = 15mA, Note 2 1.0 V BE(sat) C B I = 500mA, I = 50mA, Note 2 1.2 V C B Note 2. Measured under pulsed conditions.Electrical Characteristics (Contd): (T = +25C unles otherwise specified) J Parameter Symbol Test Conditions Min Typ Max Unit DC Current Gain h V = 5V, I = 100 A, Note 2 30 FE CE C V = 5V, I = 100mA, Note 2 100 300 CE C V = 5V, I = 500mA, Note 2 50 CE C Transition Frequency f V = 10V, I = 50mA, f = 35MHz 100 MHz T CE C Collector Capacitance NTE2428 C V = 10V, I = I = 0, f = 1MHz 12 pF c CB E e NTE2429 20 pF Emitter Capacitance NTE2428 C V = 500mV, I = I = 0, f = 1MHz 90 pF e EB C c NTE2429 120 pF TurnOn Time NTE2428 t I = 100mA, I = I = 5mA 250 ns on Con Bon Boff NTE2429 500 ns TurnOff Time NTE2428 t 1000 ns off NTE2429 650 ns Note 2. Measured under pulsed conditions. .174 (4.42) .059 (1.5) .067 (1.7) .096 (2.46) .161 (4.1) .041 (1.05) EC B Min .015 (0.32) .020 (.508) .059 (1.5) .118 (3.0) Bottom View

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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