NTE2428 (NPN) & NTE2429 (PNP) Silicon Complementary Transistors General Purpose Switch Description: The NTE2428 and NTE2429 are silicon complementary transistors in a SOT89 type surface mount package designed for use in thick and thin film circuits. Typical applications include telephone and general industrial. Absolute Maximum Ratings: CollectorBase Voltage (Open Emitter), V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V CBO CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V CER EmitterBase Voltage (Open Collector), V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EBO DC Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A C DC Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA B Total Power Dissipation (T +25C, Note 1), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W A tot Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C stg Thermal Resistance, JunctiontoAmbient (Note 1), R . . . . . . . . . . . . . . . . . . . . . . . . . . . 125K/W thJA Thermal Resistance, JunctiontoTab, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10K/W thJTAB 2 Note 1. Device mounted on a ceramic substrate area = 2.5cm , thickness = 0.7mm. Electrical Characteristics: (T = +25C unles otherwise specified) J Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 60V, I = 0 100 nA CBO CB E V = 60V, I = 0, T = +150C 50 A CB E J CollectorEmitter Breakdown Voltage V I = 10mA, I = 0 80 V (BR)CEO C B V I = 10 A, V = 0 90 V (BR)CES C BE EmitterBase Breakdown Voltage V I = 10 A, I = 0 5 V (BR)EBO E C CollectorEmitter Saturation Voltage V I = 150mA, I = 15mA, Note 2 250 mV CE(sat) C B I = 500mA, I = 50mA, Note 2 500 mV C B BaseEmitter Saturation Voltage V I = 150mA, I = 15mA, Note 2 1.0 V BE(sat) C B I = 500mA, I = 50mA, Note 2 1.2 V C B Note 2. Measured under pulsed conditions.Electrical Characteristics (Contd): (T = +25C unles otherwise specified) J Parameter Symbol Test Conditions Min Typ Max Unit DC Current Gain h V = 5V, I = 100 A, Note 2 30 FE CE C V = 5V, I = 100mA, Note 2 100 300 CE C V = 5V, I = 500mA, Note 2 50 CE C Transition Frequency f V = 10V, I = 50mA, f = 35MHz 100 MHz T CE C Collector Capacitance NTE2428 C V = 10V, I = I = 0, f = 1MHz 12 pF c CB E e NTE2429 20 pF Emitter Capacitance NTE2428 C V = 500mV, I = I = 0, f = 1MHz 90 pF e EB C c NTE2429 120 pF TurnOn Time NTE2428 t I = 100mA, I = I = 5mA 250 ns on Con Bon Boff NTE2429 500 ns TurnOff Time NTE2428 t 1000 ns off NTE2429 650 ns Note 2. Measured under pulsed conditions. .174 (4.42) .059 (1.5) .067 (1.7) .096 (2.46) .161 (4.1) .041 (1.05) EC B Min .015 (0.32) .020 (.508) .059 (1.5) .118 (3.0) Bottom View