NTE2431 Silicon PNP Transistor High Voltage Amp/Switch (Compl to NTE2430) Description: The NTE2431 is a silicon PNP transistor in a SOT89 type surface mount package designed for use in amplifier and switching switching applications. Absolute Maximum Ratings: CollectorBase Voltage (Open Emitter), V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350V CBO CollectorEmitter Voltage (Open Base), V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V CEO EmitterBase Voltage (Open Collector), V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V EBO DC Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A C Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA B Total Power Dissipation (T +25C, Note 1), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W A tot Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C stg Thermal Resistance, JunctiontoAmbient (Note 1), R . . . . . . . . . . . . . . . . . . . . . . . . . . . 125K/W thJA Thermal Resistance, JunctiontoTab, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10K/W thJTAB 2 Note 1. Device mounted on a ceramic substrate area = 2.5cm , thickness = 0.7mm. Electrical Characteristics: (T = +25C unles otherwise specified) J Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 280V, I = 0 1 A CBO CB E I V = 250V, I = 0 50 A CEO CE B Emitter Cutoff Current I V = 6V, I = 0 20 A EBO EB C CollectorEmitter Breakdown Voltage V I = 50mA, I = 0, L = 25mH 300 V (BR)CEO C B CollectorEmitter Saturation Voltage V I = 50mA, I = 5mA 2 V CE(sat) C B DC Current Gain h V = 10V, I = 50mA 30 120 FE CE C Collector Capacitance C I = I = 0, V = 10, f = 1MHz 15 pF c E e CB Transitional Frequency f V = 10V, I = 10mA, f = 30MHz 15 MHz T CE C.174 (4.42) .059 (1.5) .067 (1.7) .096 (2.46) .161 (4.1) .041 EC B (1.05) Min .015 (0.32) .020 (.508) .059 (1.5) .118 (3.0) Bottom View