NTE234 Silicon PNP Transistor Low Noise, High Gain Amplifier TO92 Type Package (Compl to NTE2696) Description: The NTE234 is a silicon PNP transistor in a TO92 type package designed especially for low noise preamplifier and small signal industrial amplifier applications. This device features low collector satu- ration voltage, tight beta control, and excellent low noise characteristics. Features: Low Noise High DC Current Gain High Breakdown Voltage Low Pulse Noise Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorEmitter Voltage, V ..................................................... 120V CEO Collector Base Voltage, V ...................................................... 120V CBO EmitterBase Voltage, V .......................................................... 5V EBO Steady State Collector Current, I ................................................. 100mA C Emitter Current, I ............................................................... 100mA E Collector Power Dissipation, P .................................................. 300mW C Operating Junction Temperature Range, T .................................. 55 to +125C J Storage Temperature Range, T .......................................... 55 to +125C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 120V, I = 0 100 nA CBO CB E Emitter Cutoff Current I V = 5V, I = 0 100 nA EBO EB C Breakdown Voltage V I = 1mA, I = 0 120 V (BR)CEO C B CollectortoEmitter DC Current Gain h V = 6V, I = 2mA 350 700 FE CE C Rev. 815Electrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Saturation Voltage V I = 10mA, I = 1mA 0.3 V CE(sat) C B CollectortoEmitter BasetoEmitter Voltage V V = 6V, I = 2mA 0.65 V BE CE C Transition Frequency f V = 6V, I = 1mA 100 MHz T CE C Collector Output Capacitance C V = 10V, I = 0, f = 1MHz 4 pF ob CB E Noise Figure NF V = 6V, I = 100A, 6 dB CE C f = 10Hz, R = 10k g V = 6V, I = 100A, 2 CE C f = 1Hz, R = 10k g V = 6V, I = 100A, 3 CE C f = 1Hz, R = 100k g .135 (3.45) Min .210 (5.33) Max Seating Plane .500 .021 (.445) Dia Max (12.7) Min E C B .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max