X-On Electronics has gained recognition as a prominent supplier of NTE234 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE234 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NTE234 NTE

NTE234 electronic component of NTE
Images are for reference only
See Product Specifications
Part No.NTE234
Manufacturer: NTE
Category: Bipolar Transistors - BJT
Description: Transistor: PNP; bipolar; 120V; 100mA; 300mW; TO92
Datasheet: NTE234 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.7625 ea
Line Total: USD 2.76 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 149.8068
10 : USD 127.8317
50 : USD 121.1062
100 : USD 115.0516
250 : USD 76.7112

0
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 2.7625
3 : USD 2.47
6 : USD 1.3217
40 : USD 0.8483

   
Manufacturer
Product Category
Polarisation
Mounting
Case
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Power Dissipation
Current Gain
Frequency
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE234 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE234 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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NTE234 Silicon PNP Transistor Low Noise, High Gain Amplifier TO92 Type Package (Compl to NTE2696) Description: The NTE234 is a silicon PNP transistor in a TO92 type package designed especially for low noise preamplifier and small signal industrial amplifier applications. This device features low collector satu- ration voltage, tight beta control, and excellent low noise characteristics. Features: Low Noise High DC Current Gain High Breakdown Voltage Low Pulse Noise Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorEmitter Voltage, V ..................................................... 120V CEO Collector Base Voltage, V ...................................................... 120V CBO EmitterBase Voltage, V .......................................................... 5V EBO Steady State Collector Current, I ................................................. 100mA C Emitter Current, I ............................................................... 100mA E Collector Power Dissipation, P .................................................. 300mW C Operating Junction Temperature Range, T .................................. 55 to +125C J Storage Temperature Range, T .......................................... 55 to +125C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 120V, I = 0 100 nA CBO CB E Emitter Cutoff Current I V = 5V, I = 0 100 nA EBO EB C Breakdown Voltage V I = 1mA, I = 0 120 V (BR)CEO C B CollectortoEmitter DC Current Gain h V = 6V, I = 2mA 350 700 FE CE C Rev. 815Electrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Saturation Voltage V I = 10mA, I = 1mA 0.3 V CE(sat) C B CollectortoEmitter BasetoEmitter Voltage V V = 6V, I = 2mA 0.65 V BE CE C Transition Frequency f V = 6V, I = 1mA 100 MHz T CE C Collector Output Capacitance C V = 10V, I = 0, f = 1MHz 4 pF ob CB E Noise Figure NF V = 6V, I = 100A, 6 dB CE C f = 10Hz, R = 10k g V = 6V, I = 100A, 2 CE C f = 1Hz, R = 10k g V = 6V, I = 100A, 3 CE C f = 1Hz, R = 100k g .135 (3.45) Min .210 (5.33) Max Seating Plane .500 .021 (.445) Dia Max (12.7) Min E C B .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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