APT100GT120JRDQ4 1200V, 100A, V = 3.2V Typical CE(ON) Thunderbolt IGBT The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT offers superior rugged- ness and ultrafast switching speed. Features RBSOA and SCSOA Rated Low Forward Voltage Drop UL Recognize High Frequency Switching to 50KHz file E145592 Low Tail Current ISOTOP Ultra Low Leakage Current Integrated Gate Resistor Low EMI, High Reliability RoHS Compliant Unless stated otherwise, Microsemi discrete IGBTs contain a single IGBT die. This device is made with two parallel IGBT die. It is intended for switch-mode operation. It is not suitable for linear mode operation. Maximum Ratings All Ratings: T = 25C unless otherwise speci ed. C Parameter Ratings Unit Symbol V Collector-Emitter Voltage 1200 CES Volts Gate-Emitter Voltage 20 V GE 123 I Continuous Collector Current T = 25C C1 C 67 I Continuous Collector Current T = 100C Amps C2 C 1 200 I Pulsed Collector Current CM SSOA 200A 1200V Switching Safe Operating Area T = 150C J Total Power Dissipation 570 Watts P D Operating and Storage Junction Temperature Range -55 to 150 T , T J STG C T Max. Lead Temp. for Soldering: 0.063 from Case for 10 Sec. 300 L Static Electrical Characteristics Characteristic / Test Conditions Unit Symbol Min Typ Max V 1200 - - Collector-Emitter Breakdown Voltage (V = 0V, I = 5mA) (BR)CES GE C V Gate Threshold Voltage (V = V , I = 4mA, T = 25C) 4.5 5.5 6.5 GE(TH) CE GE C j Volts Collector Emitter On Voltage (V = 15V, I = 100A, T = 25C) 2.7 3.2 3.7 GE C j V CE(ON) Collector Emitter On Voltage (V = 15V, I = 100A, T = 125C) - 4.0 - GE C j 2 Collector Cut-off Current (V = 1200V, V = 0V, T = 25C) - - 200 CE GE j I A CES 2 Collector Cut-off Current (V = 1200V, V = 0V, T = 125C) - - TBD CE GE j I Gate-Emitter Leakage Current (V = 20V) - - 600 nA GES GE Integrated Gate Resistor R -5- G(int) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - Dynamic Characteristic APT100GT120JRDQ4 Symbol Characteristic Test Conditions Min Typ Max Unit C Input Capacitance - 6700 - ies V = 0V, V = 25V GE CE C Output Capacitance - 655 - pF oes f = 1MHz C Reverse Transfer Capacitance - 440 - res V Gate-to-Emitter Plateau Voltage - 10.0 - V GEP Gate Charge Q Total Gate Charge - 685 - V = 15V g GE V = 600V Q Gate-Emitter Charge -75 - nC ge CE I = 100A Q Gate-Collector Charge C - 400 - gc 7 T = 150C, R = 1.0 , V = 15V, J G GE SSOA Switching Safe Operating Area 150 A L = 100 H, V = 1200V CE t Turn-On Delay Time -50 - d(on) t Current Rise Time Inductive Switching (25C) - 100 - r ns V = 800V t Turn-Off Delay Time CC - 630 - d(off) V = 15V GE t Current Fall Time -36 - f I = 100A C 4 E Turn-On Switching Energy - TBD - on1 R = 4.7 G 5 E Turn-On Switching Energy - 17600 - J T = +25C on2 J 6 E Turn-Off Switching Energy - 7240 - off t Turn-On Delay Time -50 - d(on) t Current Rise Time - 100 - r Inductive Switching (125C) ns t Turn-Off Delay Time - 710 - V = 800V d(off) CC t Current Fall Time V = 15V -37 - GE f 4 I = 100A E C Turn-On Switching Energy - TBD - on1 R = 4.7 5 G E Turn-On Switching Energy - 22380 - J on2 T = 125C J 6 E Turn-Off Switching Energy - 10950 - off Thermal and Mechanical Characteristics Characteristic / Test Conditions Min Typ Max Unit Symbol - - 0.22 Junction to Case (IGBT) R JC C/W - - 0.56 Junction to Case (DIODE) R JC Package Weight - 29.2 - W g T RMS Voltage (50-60Hz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.) 2500 - - V Volts Isolation 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, I includes both IGBT and FRED leakages. ces 3 See MIL-STD-750 Method 3471. 4 E is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to on1 z a the IGBT turn-on loss. Tested in inductive switching test circuit shown in gure 21, but with a Silicon Carbide diode. 5 E is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching on2 loss. (See Figures 21, 22.) 6 E is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) off 7 R is external gate resistance not including gate driver impedance. G Microsemi reserves the right to change, without notice, the speci cations and information contained herein. 052-6290 Rev D 1-2011