Product Information

APT100GT120JU3

APT100GT120JU3 electronic component of Microchip

Datasheet
IGBT Modules Power Module - IGBT
Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 47.2075 ea
Line Total: USD 47.21

25 - Global Stock
Ships to you between
Wed. 22 May to Fri. 24 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
25 - WHS 1


Ships to you between Wed. 22 May to Fri. 24 May

MOQ : 1
Multiples : 1

Stock Image

APT100GT120JU3
Microchip

1 : USD 43.033
100 : USD 38.5595

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Maximum Operating Temperature
Minimum Operating Temperature
Packaging
Pd - Power Dissipation
Package / Case
Brand
Factory Pack Quantity :
Mounting Style
Cnhts
Hts Code
Maximum Gate Emitter Voltage
Mxhts
Product Type
Subcategory
Taric
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Additional Infomation About Product

APT100GT120JU3 ISOTOP Buck chopper V = 1200V CES Trench + Field Stop IGBT3 I = 100A Tc = 80C C C Application AC and DC motor control Switched Mode Power Supplies G Features Trench + Field Stop IGBT3 Technology - Low voltage drop E - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated A ISOTOP Package (SOT-227) Very low stray inductance High level of integration A Benefits E Low conduction losses Stable temperature behavior Very rugged C G Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive T of V C CEsat RoHS Compliant ISOTOP Absolute maximum ratings Symbol Parameter Max ratings Unit V Collector - Emitter Breakdown Voltage 1200 V CES I T = 25C 140 C1 C Continuous Collector Current A I T = 80C 100 C2 C I Pulsed Collector Current T = 25C 280 CM C V Gate Emitter Voltage 20 V GE P Maximum Power Dissipation T = 25C 480 W D C IF Maximum Average Forward Current Duty cycle=0.5 T = 80C 27 AV C A IF RMS Forward Current (Square wave, 50% duty) 34 RMS These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. 1-8 www.microsemi.com APT100GT120JU3 Rev 2 October, 2012 APT100GT120JU3 All ratings T = 25C unless otherwise specified j Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit I Zero Gate Voltage Collector Current V = 0V, V = 1200V 5 mA CES GE CE T = 25C V =15V j 1.4 1.7 2.1 GE V Collector Emitter saturation Voltage V CE(sat) I = 100A T = 125C C 2.0 j V Gate Threshold Voltage V = V , I = 4mA 5.0 6.5 V GE(th) GE CE C I Gate Emitter Leakage Current V = 20V, V = 0V 400 nA GES GE CE Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit C Input Capacitance V = 0V 7200 ies GE V = 25V C Output Capacitance CE 400 pF oes f = 1MHz C Reverse Transfer Capacitance 300 res T Turn-on Delay Time Resistive Switching (25C) 260 d(on) V = 15V GE T Rise Time 30 r V = 600V ns Bus T Turn-off Delay Time 420 d(off) I = 100A C T Fall Time R = 3.9 70 f G Inductive Switching (125C) T Turn-on Delay Time 290 d(on) V = 15V GE T Rise Time 45 r ns V = 600V Bus T Turn-off Delay Time 520 d(off) I = 100A C T Fall Time 90 f R = 3.9 G E Turn-on Switching Energy 10 on mJ E Turn-off Switching Energy 12 off 2-8 www.microsemi.com APT100GT120JU3 Rev 2 October, 2012

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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