APT150GN120JDQ4 1200V, 150A, V = 3.2V Typical CE(ON) Utilizing the latest Field Stop and Trench Gate technologies, these IGBTs have ultra low V and are ideal for low frequency applications that require absolute minimum CE(ON ) conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive V temperature coef cient. A built-in gate resistor ensures extremely CE(ON) reliable operation, even in the event of a short cuircuit fault. Low gate charge simpli es gate drive design and minimizes losses. 1200V Field Stop UL Recognize Trench Gate: Low V CE(ON) file E145592 ISOTOP Easy Paralleling Integrated Gate Resistor: Low EMI, High Reliability RoHS Compliant Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS Maximum Ratings All Ratings: T = 25C unless otherwise speci ed. C Symbol Parameter Ratings Unit Collector-Emitter Voltage 1200 V CES Volts Gate-Emitter Voltage 30 V GE 215 I Continuous Collector Current T = 25C C1 C 99 Amps I Continuous Collector Current T = 100C C2 C 1 450 I Pulsed Collector Current CM SSOA 450A 1200V Switching Safe Operating Area T = 150C J Total Power Dissipation 625 Watts P D T , T Operating and Storage Junction Temperature Range -55 to 150 C J STG Static Electrical Characteristics Symbol Characteristic / Test Conditions Min Typ Max Unit V Collector-Emitter Breakdown Voltage (V = 0V, I = 6mA) 1200 - - (BR)CES GE C V Gate Threshold Voltage (V = V , I = 6mA, T = 25C) 5.0 5.8 6.5 GE(TH) CE GE C j Volts Collector Emitter On Voltage (V = 15V, I = 150A, T = 25C) 1.4 1.7 2.1 GE C j V CE(ON) Collector Emitter On Voltage (V = 15V, I = 150A, T = 125C) - 2.08 - GE C j 2 Collector Cut-off Current (V = 1200V, V = 0V, T = 25C) - - 300 CE GE j I A CES 2 Collector Cut-off Current (V = 1200V, V = 0V, T = 125C) - - TBD CE GE j I Gate-Emitter Leakage Current (V = 20V) - - 600 nA GES GE R Integrated Gate Resistor - 5 - G(int) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - Dynamic Characteristic APT150GN120JDQ4 Symbol Characteristic Test Conditions Min Typ Max Unit C Input Capacitance - 9500 - ies V = 0V, V = 25V GE CE C Output Capacitance - 500 - pF oes f = 1MHz C Reverse Transfer Capacitance - 400 - res V Gate-to-Emitter Plateau Voltage - 9.5 - V GEP Gate Charge 3 Q Total Gate Charge - 800 - V = 15V g GE V = 600V Q Gate-Emitter Charge - 70 - nC ge CE I = 150A Q C Gate-Collector Charge - 430 - gc 7 T = 150C, R = 1.0 , V = 15V, J G GE SSOA Switching Safe Operating Area 450 A L = 100 H, V = 1200V CE t Turn-On Delay Time -55 - d(on) t Current Rise Time Inductive Switching (25C) -65 - r ns V = 800V t Turn-Off Delay Time CC - 675 - d(off) V = 15V GE t Current Fall Time -85 - f I = 150A C 4 E Turn-On Switching Energy -22 - 7 on1 R = 1.0 G 5 E Turn-On Switching Energy -27 - J T = +25C on2 J 6 E Turn-Off Switching Energy -15 - off t Turn-On Delay Time -55 - d(on) t Current Rise Time -65 - r Inductive Switching (125C) ns t Turn-Off Delay Time - 780 - V = 800V d(off) CC t Current Fall Time V = 15V - 175 - GE f 4 I = 150A E C Turn-On Switching Energy -23 - on1 7 R = 1.0 5 G E Turn-On Switching Energy -35 - mJ on2 T = +125C J 6 E Turn-Off Switching Energy -22 - off Thermal and Mechanical Characteristics Characteristic / Test Conditions Min Typ Max Unit Symbol - - 0.20 Junction to Case (IGBT) R JC C/W - - 0.56 Junction to Case (DIODE) R JC Package Weight - 29.2 - W g T - - 10 inlbf Torque Terminals and Mounting Screws. - - 1.1 Nm RMS Voltage (50-60Hz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.) 2500 - - V Volts Isolation 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, I includes both IGBT and FRED leakages. ces 3 See MIL-STD-750 Method 3471. 4 E is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to on1 z a the IGBT turn-on loss. Tested in inductive switching test circuit shown in gure 21, but with a Silicon Carbide diode. 5 E is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching on2 loss. (See Figures 21, 22.) 6 E is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) off 7 R is external gate resistance not including gate driver impedance. G Microsemi reserves the right to change, without notice, the speci cations and information contained herein. 050-7627 Rev A 01-2008