600V APT150GN60LDQ4(G) Utilizing the latest Field Stop and Trench Gate technologies, these IGBT s have ultra low V and are ideal for low frequency applications that require absolute minimum CE(ON) conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive V temperature coef cient. A built-in gate resistor ensures CE(ON) extremely reliable operation, even in the event of a short circuit fault. Low gate charge simpli es gate drive design and minimizes losses. 600V Field Stop Trench Gate: Low V CE(on) Easy Paralleling APT150GN60LDQ4(G) Intergrated Gate Resistor: Low EMI, High Reliability Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS MAXIMUM RATINGS All Ratings: T = 25C unless otherwise speci ed. C Parameter Symbol APT150GN60LDQ4(G) UNIT V Collector-Emitter Voltage 600 CES Volts V Gate-Emitter Voltage 30 GE 1 I Continuous Collector Current T = 25C 220 C1 C I Continuous Collector Current T = 110C 123 Amps C2 C 2 Pulsed Collector Current I 450 CM Switching Safe Operating Area T = 175C 450A 600V SSOA J P Total Power Dissipation 536 Watts D T ,T Operating and Storage Junction Temperature Range -55 to 175 J STG C T Max. Lead Temp. for Soldering: 0.063 from Case for 10 Sec. 300 L STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX Units V Collector-Emitter Breakdown Voltage (V = 0V, I = 4mA) 600 (BR)CES GE C V Gate Threshold Voltage (V = V , I = 2400 A, T = 25C) 5.0 5.8 6.5 GE(TH) CE GE C j Volts Collector-Emitter On Voltage (V = 15V, I = 150A, T = 25C) 1.05 1.45 1.85 GE C j V CE(ON) Collector-Emitter On Voltage (V = 15V, I = 150A, T = 125C) 1.65 GE C j 3 Collector Cut-off Current (V = 600V, V = 0V, T = 25C) 75 CE GE j I A CES 3 Collector Cut-off Current (V = 600V, V = 0V, T = 125C) 2000 CE GE j I Gate-Emitter Leakage Current (V = 20V) nA 600 GES GE R Intergrated Gate Resistor 2 G(int) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - APT150GN60LDQ4(G) Typical Performance Curves Characteristic Test Conditions Symbol MIN TYP MAX UNIT C Input Capacitance 9200 Capacitance ies C Output Capacitance 350 pF V = 0V, V = 25V oes GE CE C f = 1 MHz Reverse Transfer Capacitance 300 res V Gate-to-Emitter Plateau Voltage Gate Charge 9.5 V GEP 4 Q V = 15V Total Gate Charge 970 g GE V = 300V Q Gate-Emitter Charge 65 nC CE ge I = 150A Q Gate-Collector Mille) Charge C 510 gc 8 T = 175C, R = 4.3 , V = J G GE SSOA Switching Safe Operating Area 450 A 15V, L = 100 H,V = 600V CE t Inductive Switching (25C) Turn-on Delay Time 44 d(on) t V = 400V Current Rise Time 110 r CC ns V = 15V t Turn-off Delay Time GE d(off) 430 I = 150A t C f Current Fall Time 60 8 R = 1.0 5 E G Turn-on Switching Energy 8810 on1 T = +25C 6 J E J Turn-on Switching Energy (Diode) on2 8615 7 E Turn-off Switching Energy 4295 off t Inductive Switching (125C) Turn-on Delay Time d(on) 44 t V = 400V Current Rise Time 110 r CC ns t V = 15V Turn-off Delay Time d(off) GE 480 I = 150A t Current Fall Time C f 95 8 R = 1.0 5 4 E G Turn-on Switching Energy on1 8880 T = +125C 65 J E Turn-on Switching Energy (Diode) J on2 9735 67 E Turn-off Switching Energy 5460 off THERMAL AND MECHANICAL CHARACTERISTICS Characteristic / Test Conditions Min Typ Max Unit Symbol R Junction to Case (IGBT) - - 0.28 C/W JC R Junction to Case (DIODE) - - .30 JC V RMS Voltage (50-60Hz Sinsoidal Waveform from Terminals to Mounting Base for 1 Min.) 2500 Isolation W Package Weight - 6.1 - gm T 1 Continuous current limited by case temperature. 2 Repetitive Rating: Pulse width limited by maximum junction temperature. 3 For Combi devices, I includes both IGBT and FRED leakages ces 4 See MIL-STD-750 Method 3471. 5 E is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current on1 adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in gure 21, but with a Silicon Carbide diode. 6 E is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching on2 loss. (See Figures 21, 22.) 7 E is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) off 8 R is external gate resistance, not including R nor gate driver impedance. (MIC4452) G G(int) Microsemi Reserves the right to change, without notice, the speci cations and information contained herein. 050-7633 Rev A 10-2008