APT40GP60J 600V POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.UL RecognizeC Low Conduction Loss 100 kHz operation 400V, 25A ISOTOP Low Gate Charge 200 kHz operation 400V, 16A G Ultrafast Tail Current shutoff SSOA rated E MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Symbol Parameter APT40GP60J UNIT Collector-Emitter Voltage V 600 CES Gate-Emitter Voltage V 20 Volts GE 30 V Gate-Emitter Voltage Transient GEM I 86 Continuous Collector Current T = 25C C1 C I 40 Continuous Collector Current T = 110C Amps C2 C 1 I 160 Pulsed Collector Current T = 25C CM C SSOA Switching Safe Operating Area T = 150C 160A 600V J P 284 Total Power Dissipation Watts D T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Max. Lead Temp. for Soldering: 0.063 from Case for 10 Sec. 300 L STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT 600 BV Collector-Emitter Breakdown Voltage (V = 0V, I = 250A) CES GE C V Gate Threshold Voltage (V = V , I = 1mA, T = 25C) 3 4.5 6 GE(TH) CE GE C j Volts Collector-Emitter On Voltage (V = 15V, I = 40A, T = 25C) GE C j 2.2 2.7 V CE(ON) Collector-Emitter On Voltage (V = 15V, I = 40A, T = 125C) 2.1 GE C j 2 Collector Cut-off Current (V = 600V, V = 0V, T = 25C) 250 CE GE j A I CES 2 Collector Cut-off Current (V = 600V, V = 0V, T = 125C) 2500 CE GE j Gate-Emitter Leakage Current (V = 20V) nA I 100 GE GES CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - APT40GP60J DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions MIN TYP MAX UNIT C Input Capacitance 4610 Capacitance ies C Output Capacitance V = 0V, V = 25V 395 pF oes GE CE C f = 1 MHz Reverse Transfer Capacitance 25 res V Gate-to-Emitter Plateau Voltage 7.5 V GEP Gate Charge 3 Q V = 15V Total Gate Charge GE 135 g V = 300V Q nC Gate-Emitter Charge CE 30 ge I = 40A C Q Gate-Collector Mille) Charge gc 40 SSOA Switching SOA T = 150C, R = 5, V = 160 A J G GE 15V, L = 100H,V = 600V CE t Turn-on Delay Time 20 Inductive Switching (25C) d(on) V (Peak) = 400V CC t Current Rise Time 29 r ns V = 15V GE t Turn-off Delay Time 64 d(off) I = 40A C t 45 Current Fall Time f R = 5 G 4 E Turn-on Switching Energy 385 on1 T = +25C J 5 E Turn-on Switching Energy (Diode) 644 J on2 6 E Turn-off Switching Energy 352 450 off t Turn-on Delay Time Inductive Switching (125C) 20 d(on) V (Peak) = 400V t CC Current Rise Time 29 r ns V = 15V GE t Turn-off Delay Time 89 d(off) I = 40A C t Current Fall Time 69 f R = 5 G 4 E Turn-on Switching Energy 385 on1 T = +125C J 5 Turn-on Switching Energy (Diode) E 972 on2 J 6 E Turn-off Switching Energy 615 950 off THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX UNIT R Junction to Case (IGBT) .44 JC C/W R Junction to Case (DIODE) N/A JC W Package Weight 29.2 gm T 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, I includes both IGBT and FRED leakages ces 3 See MIL-STD-750 Method 3471. 4E is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current on1 adding to the IGBT turn-on loss. (See Figure24.) 5E is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching on2 loss. A Combi device is used for the clamping diode as shown in the E test circuit. (See Figures 21, 22.) on2 6E is the clamped inductive turn-off energy measured in accordance wtih JEDEC standard JESD24-1. (See Figures 21, 23.) off APT Reserves the right to change, without notice, the specifications and information contained herein. 050-7410 Rev C 4-2003