APT65GP60J 600V POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequencyUL Recognize switchmode power supplies. ISOTOP Low Conduction Loss 100 kHz operation 400V, 33A C Low Gate Charge 50 kHz operation 400V, 47A Ultrafast Tail Current shutoff SSOA rated G E MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Symbol Parameter UNIT APT65GP60J V Collector-Emitter Voltage 600 CES V Gate-Emitter Voltage 20 Volts GE 30 V Gate-Emitter Voltage Transient GEM I 130 Continuous Collector Current T = 25C C1 C I Amps Continuous Collector Current T = 110C 60 C2 C 1 I Pulsed Collector Current T = 25C 250 CM C SSOA Safe Operating Area T = 150C 250A 600V J P 431 Watts Total Power Dissipation D T ,T -55 to 150 Operating and Storage Junction Temperature Range J STG C T Max. Lead Temp. for Soldering: 0.063 from Case for 10 Sec. 300 L STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BV Collector-Emitter Breakdown Voltage (V = 0V, I = 1000A) 600 CES GE C V Gate Threshold Voltage (V = V , I = 2.5mA, T = 25C) 3 4.5 6 GE(TH) CE GE C j Volts Collector-Emitter On Voltage (V = 15V, I = 65A, T = 25C) GE C j 2.2 2.7 V CE(ON) Collector-Emitter On Voltage (V = 15V, I = 65A, T = 125C) 2.1 GE C j 2 Collector Cut-off Current (V = 600V, V = 0V, T = 25C) 1000 CE GE j I A CES 2 Collector Cut-off Current (V = 600V, V = 0V, T = 125C) 5000 CE GE j Gate-Emitter Leakage Current (V = 20V) nA I 100 GE GES CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - APT65GP60J DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions UNIT MIN TYP MAX C Input Capacitance 7400 Capacitance ies C Output Capacitance V = 0V, V = 25V 580 pF oes GE CE f = 1 MHz C Reverse Transfer Capacitance 35 res V Gate-to-Emitter Plateau Voltage 7.5 V GEP Gate Charge 3 V = 15V Q Total Gate Charge GE 210 g V = 300V Q nC Gate-Emitter Charge CE 50 ge I = 65A C Q Gate-Collector Mille) Charge 65 gc SSOA Safe Operating Area T = 150C, R = 5, V = 250 A J G GE 15V, L = 100H,V = 600V CE t 30 Turn-on Delay Time Inductive Switching (25C) d(on) V = 400V CC t Current Rise Time 54 r ns V = 15V GE t Turn-off Delay Time 91 d(off) I = 65A C t 65 Current Fall Time f R = 5 G 4 E Turn-on Switching Energy 605 on1 T = +25C J 5 E Turn-on Switching Energy (Diode) 1408 J on2 6 E Turn-off Switching Energy 896 off t Turn-on Delay Time Inductive Switching (125C) 30 d(on) V = 400V CC t Current Rise Time 54 r ns V = 15V GE t Turn-off Delay Time 128 d(off) I = 65A C t 91 Current Fall Time f R = 5 G 4 E 605 Turn-on Switching Energy on1 T = +125C J 5 E Turn-on Switching Energy (Diode) 1925 on2 J 6 E Turn-off Switching Energy 1470 off THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX UNIT R .29 Junction to Case (IGBT) JC C/W R Junction to Case (DIODE) N/A JC gm W Package Weight 29.2 T 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, I includes both IGBT and FRED leakages ces 3 See MIL-STD-750 Method 3471. 4E is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current on1 adding to the IGBT turn-on loss. (See Figure 24.) 5E is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching on2 loss. A Combi device is used for the clamping diode as shown in the E test circuit. (See Figures 21, 22.) on2 6E is the clamped inductive turn-off energy measured in accordance with JEDEC standard JEDS24-1. (See Figures 21, 23.) off APT Reserves the right to change, without notice, the specifications and information contained herein. 050-7439 Rev A 4-2003