SST26VF064B / SST26VF064BA 2.5V/3.0V 64 Mbit Serial Quad I/O (SQI) Flash Memory Security ID Features - One-Time Programmable (OTP) 2 KByte, Secure ID Single Voltage Read and Write Operations - 64 bit unique, factory pre-programmed identifier - 2.7-3.6V or 2.3-3.6V - User-programmable area Serial Interface Architecture Temperature Range - Nibble-wide multiplexed I/Os with SPI-like serial - Industrial: -40C to +85C command structure - Extended: -40C to +105C - Mode 0 and Mode 3 Packages Available - x1/x2/x4 Serial Peripheral Interface (SPI) Protocol - 8-contact WDFN (6mm x 5mm) High Speed Clock Frequency - 8-contact WDFN (6mm x 8 mm) - 2.7-3.6V: 104 MHz max - 8-lead SOIJ (5.28 mm) - 2.3-3.6V: 80 MHz max - 16-lead SOIC (7.50 mm) Burst Modes - 24-ball TBGA (6mm x 8mm) - Continuous linear burst All devices are RoHS compliant - 8/16/32/64 Byte linear burst with wrap-around Superior Reliability Product Description - Endurance: 100,000 Cycles (min) The Serial Quad I/O (SQI) family of flash-memory - Greater than 100 years Data Retention devices features a six-wire, 4-bit I/O interface that Low Power Consumption: allows for low-power, high-performance operation in a - Active Read current: 15 mA (typical 104 MHz) low pin-count package. SST26VF064B/064BA also - Standby Current: 15 A (typical) support full command-set compatibility to traditional Fast Erase Time Serial Peripheral Interface (SPI) protocol. System designs using SQI flash devices occupy less board - Sector/Block Erase: 18 ms (typ), 25ms (max) space and ultimately lower system costs. - Chip Erase: 35 ms (typ), 50 ms (max) Page-Program All members of the 26 Series, SQI family are manufac- tured with proprietary, high-performance CMOS Super- - 256 Bytes per page in x1 or x4 mode Flash technology. The split-gate cell design and thick- End-of-Write Detection oxide tunneling injector attain better reliability and man- - Software polling the BUSY bit in status register ufacturability compared with alternate approaches. Flexible Erase Capability SST26VF064B/064BA significantly improve perfor- - Uniform 4 KByte sectors mance and reliability, while lowering power consump- - Four 8 KByte top and bottom parameter tion. These devices write (Program or Erase) with a overlay blocks single power supply of 2.3-3.6V. The total energy con- - One 32 KByte top and bottom overlay block sumed is a function of the applied voltage, current, and - Uniform 64 KByte overlay blocks time of application. Since for any given voltage range, Write-Suspend the SuperFlash technology uses less current to pro- gram and has a shorter erase time, the total energy - Suspend Program or Erase operation to access another block/sector consumed during any Erase or Program operation is less than alternative flash memory technologies. Software Reset (RST) mode SST26VF064B/064BA are offered in 8-contact WDFN Software Protection (6 mm x 5 mm or 6mm x 8mm), 8-lead SOIJ (5.28 mm), - Individual-Block Write Protection with permanent 16-lead SOIC (7.50 mm), and 24-ball TBGA. See Fig- lock-down capability ure 2-2 for pin assignments. - 64 KByte blocks, two 32 KByte blocks, and Two configurations are available upon order. eight 8 KByte parameter blocks SST26VF064B default at power-up has the WP and - Read Protection on top and bottom 8 KByte HOLD pins enabled, and the SIO2 and SIO3 pins dis- parameter blocks abled, to initiate SPI-protocol operations. 2015 Microchip Technology Inc. DS20005119G-page 1SST26VF064B / SST26VF064BA SST26VF064BA default at power-up has the WP and . HOLD pins disabled, and the SIO2 and SIO3 pins enabled, to initiate Quad I/O operations. See I/O Con- figuration (IOC) on page 12 for more information about configuring WP /HOLD and SIO3/SIO4 pins TO OUR VALUED CUSTOMERS It is our intention to provide our valued customers with the best documentation possible to ensure successful use of your Microchip products. To this end, we will continue to improve our publications to better suit your needs. Our publications will be refined and enhanced as new volumes and updates are introduced. If you have any questions or comments regarding this publication, please contact the Marketing Communications Department via E-mail at docerrors microchip.com. We welcome your feedback. Most Current Data Sheet To obtain the most up-to-date version of this data sheet, please register at our Worldwide Web site at: