Product Information

JANTX2N1711

JANTX2N1711 electronic component of Microchip

Datasheet
Trans GP BJT NPN 30V 0.5A 3-Pin TO-5

Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 410.6607 ea
Line Total: USD 410.66

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 1
Multiples : 1

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JANTX2N1711
Microchip

1 : USD 410.6607
10 : USD 406.5693

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Mounting Style
Brand
Collector Current Dc
Collector-Emitter Voltage
Power Dissipation
Operating Temp Range
Pin Count
Dc Current Gain
Category
Collector-Base Voltage
Emitter-Base Voltage
Package Type
Number Of Elements
Operating Temperature Classification
Rad Hardened
LoadingGif

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TECHNICAL DATA NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/225 Devices Qualified Level JAN 2N1711 2N1890 JANTX MAXIMUM RATINGS Ratings Symbol 2N1711 2N1890 Unit - 75 100 V Emitter - e 7.0 V EBO 500 I C 0 Total Power Dissipation T = +25 0.8 W A P 0 T T = +25 3.0 W C 0 - 65 to +200 C T T J , THERMAL CHARACTERISTICS Characteristics Symbol Max. Unit 0 58 Z TO - 5* 0 0 1) Derate linearly 4.57 mW/ A > 25 0 0 2) Derate linearly 17.2 mW/ > 25 C 0 ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS - I = 100 2N1711, S V 75 C 2N1890, S 100 - R = 10 , I 2N1711, S V 50 BE C CER 2 N1890, S 80 - I 2N1711, S V 30 C CEO 2N1890, S 60 Emitter - I = 100 V 7.0 E EBO - V = 60 Vdc I 10 V = 80 Vdc 10 Emitter - I EBO V = 5.0 Vdc 5.0 EB 6 Lake Street, Lawrence, MA 01841 120101 1 - 800 - 446 - 1158 / (978) 794 - 1666 / Fax: (978) 689 - 0803 1 of 2 Page Adc Base Cutoff Current CB 2N1890 CBO CB Adc 2N1711 Base Cutoff Current Collector (BR) Adc Vdc Base Breakdown Voltage (BR) = 30 mAdc Vdc Emitter Breakdown Voltage Collector (BR) = 100 mAdc Vdc Emitter Breakdown Voltage Collector CBO (BR) Adc Vdc Base Breakdown Voltage Collector outline *See appendix A for package C C for T C C for T JX C/W Thermal Impedance stg Operating & Storage Junction Temperature Range C (2) C (1) mAdc Collector Current Vdc Base Voltag CBO Vdc Base Voltage Collector 2N1711, 2N1890 JAN SERIES Characteristics Symbol Min. Max. Unit (3) ON CHARACTERISTICS - Current Transfer Ratio I = 10 = 10 Vdc C CE 20 h I = 10 Vdc FE C CE 100 300 I = 10 Vdc 2N1711, S 50 C CE - Emitter Saturation Voltage I 2N1711, S V C B CE(sat) 1.5 2N1890, S 5.0 I 2N1890, S 1.2 C B Base - Emitter Saturation Voltage I V C B BE(sat) 1.3 I = 5.0 mVd c 2N1890, S 0.9 C B DYNAMIC CHARACTERISTICS Small - Signal Short - Circuit Forward - Current Transfer Ratio I h C CE 80 200 I 90 270 C CE - Signal Short - Cir cuit - Current Transfer Ratio h I 3.5 12 C CE Small - Signal Short - I C h 4.0 8.0 Small - Signal Short - Circuit Output Admittance I h C 2N1711, S 1.0 2N1890, S .03 Output Capacitance V = 0, 100 kHz 1.0 MHz 2N1711, S C 8.0 25 E obo 2N1890, S 5.0 15 SWITCHING CHARACTERISTICS Turn - On Time + Turn - t t s - - 19500/ 225) 30 (3) Pulse Test: Pulse Width 250 to 350 2.0%. 6 Lake Street, Lawrence, MA 01841 120101 1 - 800 - 446 - 1158 / (978) 794 - 1666 / Fax: (978) 689 - 0803 Page 2 of 2 s, Duty Cycle PRF (See figure 1 of MIL off on + Off Time CB f = 10 Vdc, I pF ob CB = 10 Vdc = 5.0 mAdc, V ib CB = 10 Vdc = 5.0 mAdc, V Circuit Input Impedance = 10 Vdc f = 20 MHz = 50 mAdc, V fe Forward Magnitude of Common Emitter Small = 10 Vdc = 5.0 mAdc, V fe = 5.0 Vdc = 1.0 mAdc, V = 50 mAdc, I = 15 mAdc = 150 mAdc, I Vdc = 5.0 mAdc = 50 mAdc, I = 15 mAdc = 150 mAdc, I Vdc Collector = 500 mAdc, V = 150 mAdc, V Adc, V Forward

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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