X-On Electronics has gained recognition as a prominent supplier of JANTX2N1711 Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. JANTX2N1711 Bipolar Transistors - Pre-Biased are a product manufactured by Microchip. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

JANTX2N1711 Microchip

JANTX2N1711 electronic component of Microchip
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Part No.JANTX2N1711
Manufacturer: Microchip
Category: Bipolar Transistors - Pre-Biased
Description: Trans GP BJT NPN 30V 0.5A 3-Pin TO-5
Datasheet: JANTX2N1711 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 410.6607 ea
Line Total: USD 410.66 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 410.6607
10 : USD 406.5693

   
Manufacturer
Product Category
RoHS - XON
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Transistor Polarity
Mounting Style
Brand
Collector Current Dc
Collector-Emitter Voltage
Power Dissipation
Operating Temp Range
Pin Count
Dc Current Gain
Category
Collector-Base Voltage
Emitter-Base Voltage
Package Type
Number Of Elements
Operating Temperature Classification
Rad Hardened
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the JANTX2N1711 from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the JANTX2N1711 and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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TECHNICAL DATA NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/225 Devices Qualified Level JAN 2N1711 2N1890 JANTX MAXIMUM RATINGS Ratings Symbol 2N1711 2N1890 Unit - 75 100 V Emitter - e 7.0 V EBO 500 I C 0 Total Power Dissipation T = +25 0.8 W A P 0 T T = +25 3.0 W C 0 - 65 to +200 C T T J , THERMAL CHARACTERISTICS Characteristics Symbol Max. Unit 0 58 Z TO - 5* 0 0 1) Derate linearly 4.57 mW/ A > 25 0 0 2) Derate linearly 17.2 mW/ > 25 C 0 ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS - I = 100 2N1711, S V 75 C 2N1890, S 100 - R = 10 , I 2N1711, S V 50 BE C CER 2 N1890, S 80 - I 2N1711, S V 30 C CEO 2N1890, S 60 Emitter - I = 100 V 7.0 E EBO - V = 60 Vdc I 10 V = 80 Vdc 10 Emitter - I EBO V = 5.0 Vdc 5.0 EB 6 Lake Street, Lawrence, MA 01841 120101 1 - 800 - 446 - 1158 / (978) 794 - 1666 / Fax: (978) 689 - 0803 1 of 2 Page Adc Base Cutoff Current CB 2N1890 CBO CB Adc 2N1711 Base Cutoff Current Collector (BR) Adc Vdc Base Breakdown Voltage (BR) = 30 mAdc Vdc Emitter Breakdown Voltage Collector (BR) = 100 mAdc Vdc Emitter Breakdown Voltage Collector CBO (BR) Adc Vdc Base Breakdown Voltage Collector outline *See appendix A for package C C for T C C for T JX C/W Thermal Impedance stg Operating & Storage Junction Temperature Range C (2) C (1) mAdc Collector Current Vdc Base Voltag CBO Vdc Base Voltage Collector 2N1711, 2N1890 JAN SERIES Characteristics Symbol Min. Max. Unit (3) ON CHARACTERISTICS - Current Transfer Ratio I = 10 = 10 Vdc C CE 20 h I = 10 Vdc FE C CE 100 300 I = 10 Vdc 2N1711, S 50 C CE - Emitter Saturation Voltage I 2N1711, S V C B CE(sat) 1.5 2N1890, S 5.0 I 2N1890, S 1.2 C B Base - Emitter Saturation Voltage I V C B BE(sat) 1.3 I = 5.0 mVd c 2N1890, S 0.9 C B DYNAMIC CHARACTERISTICS Small - Signal Short - Circuit Forward - Current Transfer Ratio I h C CE 80 200 I 90 270 C CE - Signal Short - Cir cuit - Current Transfer Ratio h I 3.5 12 C CE Small - Signal Short - I C h 4.0 8.0 Small - Signal Short - Circuit Output Admittance I h C 2N1711, S 1.0 2N1890, S .03 Output Capacitance V = 0, 100 kHz 1.0 MHz 2N1711, S C 8.0 25 E obo 2N1890, S 5.0 15 SWITCHING CHARACTERISTICS Turn - On Time + Turn - t t s - - 19500/ 225) 30 (3) Pulse Test: Pulse Width 250 to 350 2.0%. 6 Lake Street, Lawrence, MA 01841 120101 1 - 800 - 446 - 1158 / (978) 794 - 1666 / Fax: (978) 689 - 0803 Page 2 of 2 s, Duty Cycle PRF (See figure 1 of MIL off on + Off Time CB f = 10 Vdc, I pF ob CB = 10 Vdc = 5.0 mAdc, V ib CB = 10 Vdc = 5.0 mAdc, V Circuit Input Impedance = 10 Vdc f = 20 MHz = 50 mAdc, V fe Forward Magnitude of Common Emitter Small = 10 Vdc = 5.0 mAdc, V fe = 5.0 Vdc = 1.0 mAdc, V = 50 mAdc, I = 15 mAdc = 150 mAdc, I Vdc = 5.0 mAdc = 50 mAdc, I = 15 mAdc = 150 mAdc, I Vdc Collector = 500 mAdc, V = 150 mAdc, V Adc, V Forward

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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