TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/544 DEVICES LEVELS 2N5152 2N5154 JAN JANTX 2N5152L 2N5154L JANTXV 2N5152U3 2N5154U3 JANS ABSOLUTE MAXIMUM RATINGS (T = +25C unless otherwise noted) C Parameters / Test Conditions Symbol Value Unit Collector-Emitter Voltage V 80 Vdc CEO Collector-Base Voltage V 100 Vdc CBO Emitter-Base Voltage V 5.5 Vdc EBO Collector Current I 2.0 Adc C (1) Total Power Dissipation T = +25C 1.0 A P W T T = +25C 10 C TO-5 Operating & Storage Junction Temperature Range T , T -65 to +200 C 2N5152L, 2N5154L J stg 10 (1) Thermal Resistance, Junction-to Case C/W R JC 1.7 (U3) Note: 1) See 19500/544 for thermal derating curves. 2) This value applies for P 8.3ms, duty cycle 1%. W ELECTRICAL CHARACTERISTICS (T = +25C, unless otherwise noted) A Parameters / Test Conditions Symbol Min. Max. Unit OFF CHARACTERTICS TO-39 (TO-205AD) Collector-Emitter Breakdown Voltage V 80 Vdc (BR)CEO 2N5152, 2N5154 I = 100mAdc, I = 0 C B Emitter-Base Cutoff Current V = 4.0Vdc, I = 0 I 1.0 Adc EB C EBO V = 5.5Vdc, I = 0 1.0 mAdc EB C Collector-Emitter Cutoff Current V = 60Vdc, V = 0 I 1.0 Adc CE BE CES V = 100Vdc, V = 0 1.0 mAdc CE BE Collector-Emitter Cutoff Current I 50 Adc CEO V = 40Vdc, I = 0 CE B ON CHARACTERTICS Forward-Current Transfer Ratio U-3 20 --- I = 50mAdc, V = 5Vdc 2N5152 C CE 2N5152U3, 2N5154U3 50 --- 2N5154 h FE 30 90 I = 2.5Adc, V = 5Vdc C CE 2N5152 70 200 2N5154 T4-LDS-0039 Rev. 1 (080797) Page 1 of 2 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/544 ELECTRICAL CHARACTERISTICS (cont) Parameters / Test Conditions Symbol Min. Max. Unit I = 5Adc, V = 5Vdc 2N5152 20 C CE h FE 2N5154 40 Collector-Emitter Saturation Voltage I = 2.5Adc, I = 250mAdc 0.75 C B V Vdc CE(sat) I = 5.0Adc, I = 500mAdc 1.5 C B Base-Emitter Voltage Non-Saturation V 1.45 Vdc BE I = 2.5Adc, V = 5Vdc C CE Base-Emitter Saturation Voltage I = 2.5Adc, I = 250mAdc 1.45 C B V Vdc BE(sat) I = 5.0Adc, I = 500mAdc 2.2 C B DYNAMIC CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio I = 500mAdc, V = 5Vdc, f = 10MHz 2N5152 h 6 C CE fe 2N5154 7 Small-signal short Circuit Forward-Current Transfer Ratio h fe I = 100mAdc, V = 5Vdc, f = 1KHz 2N5152 20 C CE 2N5154 50 Output Capacitance C 250 obo pF V = 10Vdc, I = 0, f = 1.0MHz CB E SWITCHING CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Turn-On Time t 0.5 s on I = 5Adc, I = 500mAdc C B1 Turn-Off Time t 1.5 s off R = 6 L 1.4 Storage Time I = -500mAdc t s B2 s Fall Time V = 3.7Vdc t 0.5 s BE(OFF) f SAFE OPERATING AREA DC Tests T = +25C, 1 Cycle, t = 1.0s C P Test 1 V = 5.0Vdc, I = 2.0Adc CE C Test 2 V = 32Vdc, I = 310mAdc CE C Test 3 V = 80Vdc, I = 12.5mAdc CE C T4-LDS-0039 Rev. 1 (080797) Page 2 of 2