MMA005AA Microchip

MMA005AA 2-20GHz, 12.5dB Gain Low-Noise Wideband Distributed Amplifier Features >16.5dBm P with 1.9dB NF and 1dB 12.5dB gain at 10GHz <2dB NF from 6-12GHz Single supply voltage of +8V 50mA Input and Output matched to 50 1.5mm x 2.82mm x 0.1mm die size Applications Instrumentation Electronic warfare Microwave communications Radar Gain & NF Power & OIP3 Typical Performance (CW, Typical Device, RF Probe): T = 25C, V = 8V A DD Parameter Min Typ Max Units Frequency 2 - 22 GHz Small Signal Gain 11.3 - 13.5 dB Noise Figure 1.9 2.5 4.0 dB Output Power, P 12 14 18 dBm 1dB Output Power, P 14 18 20 dBm 3dB Output IP3 19 26 31 dBm Drain Current 50 mA MM-PDS-0006 Rev B 1 of 10 Subject to Change Without Notice MMA005AA Table 1: Absolute Maximum Ratings, Not Simultaneous Parameter Rating Units Drain Voltage (V ) +9 V D Input Power (P ) 24 dBm IN 1 Channel Temperature (T ) 150 C C Operating Ambient Temperature (T ) -55 to +85 C A Caution, ESD Storage Temperature -65 to +150 C Sensitive Device Thermal Resistance, Channel to Die Backside 40 C/W 1 8 MTTF > 10 hours at T = 150C C Table 2: Specifications (CW, 100% Test): T = 25C, V = 8V A DD Parameter Min Max Units I - - 105 mA DD Small Signal Gain 20GHz 9.5 - dB Output Power, P 20GHz 9.0 - dBm 1dB 2 RF Probe Measurement Set-Up With Reference Planes TO VDD 100nF CAPACITOR TO GROUND 100pF CAPACITOR TO GROUND RFOUT RFIN MINIMIZE GAP 1mil Au wire used for 50 TRANSMISSION LINE all bonds 2 Reference planes are the same for S-parameter files downloadable on www.microsemi.com/mmics MM-PDS-0006 Rev B 2 of 10 Subject to Change Without Notice