SST26VF032B / SST26VF032BA 2.5V/3.0V 32 Mbit Serial Quad I/O (SQI) Flash Memory Security ID Features - One-Time Programmable (OTP) 2 KByte, Secure ID Single Voltage Read and Write Operations - 64 bit unique, factory pre-programmed identifier - 2.7-3.6V or 2.3-3.6V - User-programmable area Serial Interface Architecture Temperature Range - Nibble-wide multiplexed I/Os with SPI-like serial - Industrial: -40C to +85C command structure - Extended: -40C to +105C - Mode 0 and Mode 3 Packages Available - x1/x2/x4 Serial Peripheral Interface (SPI) Protocol - 8-contact WDFN (6mm x 5mm) High Speed Clock Frequency - 8-lead SOIJ (5.28 mm) - 2.7-3.6V: 104 MHz max - 24-ball TBGA (6mm x 8mm) - 2.3-3.6V: 80 MHz max All devices are RoHS compliant Burst Modes - Continuous linear burst Product Description - 8/16/32/64 Byte linear burst with wrap-around The Serial Quad I/O (SQI) family of flash-memory Superior Reliability devices features a six-wire, 4-bit I/O interface that allows for - Endurance: 100,000 Cycles (min) low-power, high-performance operation in a low pin-count - Greater than 100 years Data Retention package. SST26VF032B/032BA also support full com- Low Power Consumption: mand-set compatibility to traditional Serial Peripheral Inter- - Active Read current: 15 mA (typical 104 MHz) face (SPI) protocol. System designs using SQI flash devices - Standby Current: 15 A (typical) occupy less board space and ultimately lower system costs. Fast Erase Time All members of the 26 Series, SQI family are manufactured - Sector/Block Erase: 18 ms (typ), 25 ms (max) with proprietary, high-performance CMOS SuperFlash - Chip Erase: 35 ms (typ), 50 ms (max) technology. The split-gate cell design and thick-oxide tun- neling injector attain better reliability and manufacturability Page-Program compared with alternate approaches. - 256 Bytes per page in x1 or x4 mode SST26VF032B/032BA significantly improve performance End-of-Write Detection and reliability, while lowering power consumption. These - Software polling the BUSY bit in status register devices write (Program or Erase) with a single power supply Flexible Erase Capability of 2.3-3.6V. The total energy consumed is a function of the - Uniform 4 KByte sectors applied voltage, current, and time of application. Since for - Four 8 KByte top and bottom parameter overlay any given voltage range, the SuperFlash technology uses blocks less current to program and has a shorter erase time, the - One 32 KByte top and bottom overlay block total energy consumed during any Erase or Program opera- - Uniform 64 KByte overlay blocks tion is less than alternative flash memory technologies. Write-Suspend SST26VF032B/032BA are offered in 8-contact WDFN - Suspend Program or Erase operation to access (6mm x 5 mm), 8-lead SOIJ (5.28 mm), and 24-ball another block/sector TBGA(6mm x 8mm). See Figure 2-2 for pin assignments. Software Reset (RST) mode Two configurations are available upon order. Software Write Protection SST26VF032B default at power-up has the WP and - Individual-Block Write Protection with permanent HOLD pins enabled, and the SIO2 and SIO3 pins dis- lock-down capability abled, to initiate SPI-protocol operations. SST26VF032BA default at power-up has the WP and - 64 KByte blocks, two 32 KByte blocks, and HOLD pins disabled, and the SIO2 and SIO3 pins eight 8 KByte parameter blocks enabled, to initiate Quad I/O operations. See I/O Con- - Read Protection on top and bottom 8 KByte figuration (IOC) on page 12 for more information about parameter blocks configuring WP /HOLD and SIO2/SIO3 pins. 2015 Microchip Technology Inc. DS20005218D-page 1SST26VF032B / SST26VF032BA TO OUR VALUED CUSTOMERS It is our intention to provide our valued customers with the best documentation possible to ensure successful use of your Microchip products. To this end, we will continue to improve our publications to better suit your needs. Our publications will be refined and enhanced as new volumes and updates are introduced. If you have any questions or comments regarding this publication, please contact the Marketing Communications Department via E-mail at docerrors microchip.com. We welcome your feedback. Most Current Data Sheet To obtain the most up-to-date version of this data sheet, please register at our Worldwide Web site at: