X-On Electronics has gained recognition as a prominent supplier of SST26VF032BEUI-104I/SM NOR Flash across the USA, India, Europe, Australia, and various other global locations. SST26VF032BEUI-104I/SM NOR Flash are a product manufactured by Microchip. We provide cost-effective solutions for NOR Flash, ensuring timely deliveries around the world.

SST26VF032BEUI-104I/SM Microchip

SST26VF032BEUI-104I/SM electronic component of Microchip
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Part No.SST26VF032BEUI-104I/SM
Manufacturer: Microchip
Category: NOR Flash
Description: Serial Quad I/O Flash Memory with EUI-48 and EUI-64 Identifier 32Mbit 104MHz 2.5V/3V 8-Pin SOIJ Tube
Datasheet: SST26VF032BEUI-104I/SM Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.8413 ea
Line Total: USD 2.84 
Availability - 343
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
343
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 2.8413
90 : USD 2.7951
540 : USD 2.7951

24
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 5.1891
4 : USD 4.998
5 : USD 4.8804
10 : USD 4.7187
25 : USD 4.6746

   
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We are delighted to provide the SST26VF032BEUI-104I/SM from our NOR Flash category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SST26VF032BEUI-104I/SM and other electronic components in the NOR Flash category and beyond.

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SST26VF032BEUI 32 Mbit Serial Quad I/O (SQI) Flash Memory with EUI-48 and EUI-64 Identifier - 64 KByte blocks, two 32 KByte blocks, and Features eight 8 KByte parameter blocks Factory-Programmed with EUI-48 and EUI-64 - Read Protection on top and bottom 8 KByte Globally Unique Identifier parameter blocks - Secure, read-only access in Serial Flash Security ID Discoverable Parameter (SFDP) table - One-Time Programmable (OTP) 2 KByte, Secure ID Single Voltage Read and Write Operations - 64 bit unique, factory pre-programmed identifier - 2.7-3.6V or 2.3-3.6V - User-programmable area Serial Interface Architecture Temperature Range - Nibble-wide multiplexed I/Os with SPI-like serial - Industrial: -40C to +85C command structure Automotive AECQ-100 Qualified - Mode 0 and Mode 3 Packages Available - x1/x2/x4 Serial Peripheral Interface (SPI) Protocol - 8-lead SOIJ (5.28 mm) High Speed Clock Frequency All devices are RoHS compliant - 2.7-3.6V: 104 MHz max - 2.3-3.6V: 80 MHz max Product Description Burst Modes - Continuous linear burst The Serial Quad I/O (SQI) family of flash-memory - 8/16/32/64 Byte linear burst with wrap-around devices features a six-wire, 4-bit I/O interface that allows for low-power, high-performance operation in a low pin-count Superior Reliability package. SST26VF032BEUI also support full command-set - Endurance: 100,000 Cycles (min) compatibility to traditional Serial Peripheral Interface (SPI) - Greater than 100 years Data Retention protocol. System designs using SQI flash devices occupy Low Power Consumption: less board space and ultimately lower system costs. - Active Read current: 15 mA (typical 104 MHz) All members of the 26 Series, SQI family are manufactured - Standby Current: 15 A (typical) with proprietary, high-performance CMOS SuperFlash Fast Erase Time technology. The split-gate cell design and thick-oxide tun- - Sector/Block Erase: 18 ms (typ), 25 ms (max) neling injector attain better reliability and manufacturability - Chip Erase: 35 ms (typ), 50 ms (max) compared with alternate approaches. Page-Program SST26VF032BEUI significantly improve performance and - 256 Bytes per page in x1 or x4 mode reliability, while lowering power consumption. These devices End-of-Write Detection write (Program or Erase) with a single power supply of 2.3- 3.6V. The total energy consumed is a function of the applied - Software polling the BUSY bit in status register voltage, current, and time of application. Since for any given Flexible Erase Capability voltage range, the SuperFlash technology uses less current - Uniform 4 KByte sectors to program and has a shorter erase time, the total energy - Four 8 KByte top and bottom parameter overlay consumed during any Erase or Program operation is less blocks than alternative flash memory technologies. - One 32 KByte top and bottom overlay block SST26VF032BEUI is offered in 8-lead SOIJ (5.28 mm). - Uniform 64 KByte overlay blocks See Figure 2-1 for pin assignments. Write-Suspend SST26VF032BEUI default at power-up has the WP - Suspend Program or Erase operation to access and HOLD pins enabled, and the SIO2 and SIO3 another block/sector pins disabled, to initiate SPI-protocol operations.See Software Reset (RST) mode I/O Configuration (IOC) on page 11 for more Software Write Protection information about configuring WP /HOLD and SIO2/ - Individual-Block Write Protection with permanent SIO3 pins. lock-down capability 2019 Microchip Technology Inc. DS20006152A-page 1SST26VF032BEUI TO OUR VALUED CUSTOMERS It is our intention to provide our valued customers with the best documentation possible to ensure successful use of your Microchip products. To this end, we will continue to improve our publications to better suit your needs. Our publications will be refined and enhanced as new volumes and updates are introduced. If you have any questions or comments regarding this publication, please contact the Marketing Communications Department via E-mail at docerrors microchip.com. We welcome your feedback. Most Current Data Sheet To obtain the most up-to-date version of this data sheet, please register at our Worldwide Web site at:

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
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