TC1300R-3.0VUATR Microchip

+ TC1300 M 300 mA CMOS LDO with Shutdown, Bypass and Independent Delayed Reset Function Features General Description LDO with Integrated Microcontroller Reset The TC1300 combines a low dropout regulator and a Monitor Functionality microcontroller reset monitor in an 8-Pin MSOP pack- age. Total supply current is 80 A (typical), 20 to 60 Low Input Supply Current (80 A, typical) times lower than bipolar regulators. Very Low Dropout Voltage The TC1300 has a precise output with a typical accu- 10 sec (typ.) Wake-Up Time from SHDN racy of 0.5%. Other key features include low noise 300 mA Output Current operation, low dropout voltage and internal feed- Standard or Custom Output and Detected forward compensation for fast response to step Voltages changes in load. The TC1300 has both over-tempera- Power-Saving Shutdown Mode ture and over-current protection. When the shutdown Bypass Input for Quiet Operation control (SHDN) is low, the regulator output voltage falls to zero, RESET output remains valid and supply cur- Separate Input for Detected Voltage rent is reduced to 30 A (typical). The TC1300 is rated 140 msec Minimum RESET Output Duration for 300 mA of output current and stable with a 1 F out- Space-Saving MSOP Package put capacitor. Specified Junction Temperature Range: An active-low RESET is asserted when the detected -40C to +125C voltage (V ) falls below the reset voltage threshold. DET The RESET output remains low for 300 msec (typical) Applications after V rises above reset threshold. The TC1300 DET Battery-Operated Systems also has a fast wake-up response time (10sec., Portable Computers typical) when released from shutdown. Medical Instruments Pagers Cellular / GSM / PHS Phones Typical Application Circuit Related Literature 8 1 V RESET V RESET DET DET AN765, Using Microchips Micropower LDOs, DS00765. 2 7 V V V IN OUT OUT C C 2 AN766, Pin-Compatible CMOS Upgrades to 1 TC1300 1F 1F Bipolar LDOs, DS00766. 3 6 NC GND AN792, A Method to Determine How Much Battery Power a SOT23 Can Dissipate in an Application, 4 5 SHDN Bypass DS00792. C BYPASS Package Type Shutdown Control 470 pF (from Power (Optional) MSOP Control Logic) 1 8 V RESET DET V 2 7 V OUT IN TC1300VUA 3 6 NC GND Bypass 4 5 SHDN 2002 Microchip Technology Inc. DS21385C-page 1TC1300 1.0 ELECTRICAL PIN DESCRIPTIONS CHARACTERISTICS Pin Description Absolute Maximum Ratings* RESET RESET output remains low while V is DET below the reset voltage threshold and for Input Voltage ....................................................................6.5V 300 msec after V rises above reset thesh- DET Output Voltage ................................. (V - 0.3) to (V + 0.3) SS IN old. Power Dissipation ......................... Internally Limited (Note 6) V Regulated Voltage Output OUT Operating Junction Temperature, T ....... 40C < T < 150C J J Maximum Junction Temperature, Tj .............................. 150C GND Ground Terminal Storage Temperature .................................. 65C to +150C Bypass Reference Bypass Input. Connecting an Maximum Voltage on Any Pin ............. (V -0.3) to (V +0.3) SS IN optional 470 pF to this input further reduces *Notice: Stresses above those listed under maximum rat- output noise. ings may cause permanent damage to the device. This is a SHDN Shutdown Control Input. The regulator is fully stress rating only and functional operation of the device at enabled when a logic high is applied to this those or any other conditions above those indicated in the input. The regulator enters shutdown when a operational listings of this specification is not implied. Expo- logic low is applied to this input. During shut- sure to maximum rating conditions for extended periods may down, regulator output voltage falls to zero, affect device reliability. RESET output remains valid and supply cur- rent is reduced to 30 A (typ.). NC No connect V Power Supply Input IN V Detected Input Voltage. V and V can be DET DET IN connected together. ELECTRICAL CHARACTERISTICS V = V + 1V, I = 0.1 mA, C = 3.3 F, SHDN > V , T = 25C, unless otherwise noted. BOLDFACE type specifications apply IN OUT L L IH A for junction temperature (Note 8) of -40C to +125C. Parameters Sym Min Typ Max Units Conditions Input Operating Voltage V 2.7 6.0 V Note 7 IN Maximum Output Current IOUT 300 mA MAX Output Voltage V V 0.5% V Note 1 OUT R V - 2.5% V + 2.5% R R V Temperature Coefficient V /T 25 ppm/C Note 2 OUT OUT Line Regulation V / V 0.02 0.35 %(V + 1V) < V < 6V OUT IN R IN Load Regulation V /V 0.5 2.0 %I = 0.1 mA to I Note 3 OUT OUT L OUTMAX, Note 1: V is the regulator output voltage setting. R 6 ()V V 10 OUTMAX OUTMIN 2: TCV = -------------------------------------------------------------------------------------- OUT V T OUT 3: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal regulation specification. 4: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value measured at a 1V differential. 5: Thermal Regulation is defined as the change in output voltage at a time t after a change in power dissipation is applied, excluding load or line regulation effects. Specifications are for a current pulse equal to I at V = 6V for t = 10 msec. L IN MAX 6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction tem- perature and the thermal resistance from junction-to-air (i.e. T , T , ). Exceeding the maximum allowable power dissi- A J JA pation causes the device to initiate thermal shutdown. Please see Section 4.0, Thermal Considerations, of this data sheet for more details. 7: The minimum V has to meet two conditions: V 2.7V and V (V + V ). IN IN IN R DROPOUT 8: The junction temperature of the device is approximated by soaking the device under test at an ambient temperature equal to the desired junction temperature. The test time is small enough such that the rise in the junction temperature over the ambient temperature is not significant. DS21385C-page 2 2002 Microchip Technology Inc.