MC7252KDW Features High-Side Switching Low Threshold Epoxy Meets UL 94 V-0 Flammability Rating Dual Moisture Sensitivity Level 1 N&P-Channel Halogen Free. Green Device (Note 1) Lead Free Finish/RoHS Compliant Suffix Designates RoHS MOSFET Compliant. See Ordering Information) Maximum Ratings Operating Junction Temperature Range : -55C to +150C Storage Temperature Range: -55C to +150C SOT-363 (Note 2) Thermal Resistance: 833C/W Junction to Ambient Parameter Rating Symbol Unit G 5 4 Total Power Dissipation P 150 mW D C B N-Channel MOSFET 1 2 3 Drain-Source Voltage V 60 V DS A Gate-Source Volltage V 20 V GS M H I Continuous Drain Current 0.34 A D K L (Note 3) I 1.36 A Pulsed Drain Current DM J D P-Channel MOSFET DIMENSIONS Drain-Source Voltage V -50 V DS INCHES MM DIM NOTE V Gate-Source Volltage 20 V GS MIN MAX MIN MAX A 0.006 0.014 0.15 0.35 Continuous Drain Current I -0.18 A D B 0.045 0.053 1.15 1.35 (Note 3) I -0.7 A C 0.079 0.096 2.00 2.45 Pulsed Drain Current DM 0.026 0.65 D TYP. Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, G 0.047 0.055 1.20 1.40 <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. H 0.071 0.087 1.80 2.20 2. Surface Mounted on FR-4 Board Using Minimum Pad Size,1oz Copper. J ----- 0.004 ----- 0.10 3. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature. K 0.031 0.043 0.80 1.10 L 0.010 0.018 0.26 0.46 M 0.003 0.006 0.08 0.15 Suggested Solder Pad Layout Internal Structure D1 G2 S2 6 5 4 1 2 3 S1 G1 D2 Marking: Rev.3-3-12012020 1/6 MCCSEMI.COM 6 MC7252KDW Electrical Characteristics 25C (Unless Otherwise Specified) N-Channel Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics V V =0V, I =250A Drain-Source Breakdown Voltage 60 V (BR)DSS GS D V =0V, V =20V 10 A DS GS Gate-Source Leakage Current I V =0V, V =10V 200 nA GSS DS GS V =0V, V =5V 100 nA DS GS I V =48V, V =0V Zero Gate Voltage Drain Current 1 A DSS DS GS (Note 4) V V =V , I =1mA 1 1.3 2.5 V GS(th) DS GS D Gate-Threshold Voltage V =4.5V, I =0.2A 1.1 5.3 GS D (Note 4) R Drain-Source On-Resistance DS(on) V =10V, I =0.5A 0.9 5 GS D V V =0V, I =0.3A 1.5 V Diode Forward Voltage SD GS S (Note 5) Dynamic Characteristics Input Capacitance C 40 iss C V =10V,V =0V,f =1MHz 30 pF Output Capacitance DS GS oss Reverse Transfer Capacitance C 10 rss (Note 5) Switching Characteristics t 10 Turn-On Delay Time d(on) V =10V, V =50V, R =250, GS DS L ns R =10 GEN Turn-Off Delay Time t 15 d(off) t 30 Reverse recovery time ns rr I =300mA, di/dt=-100A/s, V =0V, S GS V =25V R Recovered charge Q 30 nC r Rev.3-3-12012020 2/6 MCCSEMI.COM