MCAC30N06Y Features Excellent Package for Heat Dissipation High Density Cell Design for Low R DS(ON) Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 N-CHANNEL Halogen Free. Green Device (Note 1) Lead Free Finish/RoHS Compliant Suffix Designates RoHS MOSFET Compliant. See Ordering Information) Maximum Ratings Operating Junction Temperature Range : -55C to +150C Storage Temperature Range: -55C to +150C Thermal Resistance: 5C/W Junction to Case DFN5060 Parameter Symbol Rating Unit Drain-Source Voltage V 60 V DS Gate-Source Volltage V 20 V GS D H T =25C 30 A C B Continuous Drain Current I A D T =100C 19 A C PIN 1 Pulsed Drain Current I 130 A G DM J C (Note 2) N E Avalanche Energy, Single Pulse 100 mJ AS E Total Power Dissipation P 30 W D F Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. K 2. T =25C, V =40V, V =10V, L=0.5mH, R =25 j DD G g M L Internal Structure D D D D 8 7 6 5 DIMENSIONS INCHES MM DIM NOTE MIN MAX MIN MAX A 0.031 0.047 0.80 1.20 1 2 3 4 B 0.010 0.254 TYP. S S S G C 0.193 0.222 4.90 5.64 D 0.232 0.250 5.90 6.35 Marking:MCAC30N06Y E 0.148 0.167 3.75 4.25 F 0.126 0.154 3.20 3.92 G 0.189 0.213 4.80 5.40 H 0.222 0.239 5.65 6.06 K 0.045 0.059 1.15 1.50 J 0.012 0.020 0.30 0.50 L 0.046 0.054 1.17 1.37 M 0.012 0.028 0.30 0.71 N 0.016 0.028 0.40 0.71 Rev.3-3-12012020 1/4 MCCSEMI.COMMCAC30N06Y Electrical Characteristics 25C (Unless Otherwise Specified) Parameter Symbol Test conditions Min Typ Max Unit Static Parameter Drain-Source Breakdown Voltage V V =0V, I =250A 60 V (BR)DSS GS D (Note 3) V V =V , I =250A 1.0 1.5 2.5 V GS(th) DS GS D Gate-Threshold Voltage Gate-Body Leakage I V =0V, V =20V 100 nA GSS DS GS I V =60V, V =0V Zero Gate Voltage Drain Current 1 A DSS DS GS V =10V, I =15A 16 20 GS D (Note 3) R m DS(on) Drain-Source On-Resistance V =4.5V, I =10A 17.5 22 GS D V V =0V, I =10A Diode Forward Voltage 0.85 1.2 V SD GS S (Note 4) Dynamic Parameters C Input Capacitance 1552 iss V =30V,V =0V, f=1MHz Output Capacitance C 192 pF oss DS GS C Reverse Transfer Capacitance 133 rss (Note 4) Switching Parameters Q Total Gate Charge 48 g V =10V,V =30V, I =15A Gate-Source Charge Q 7 GS DS D gs nC Q Gate-Drain Charge 10 gd Reverse Recovery Charge Q 47 rr I =10A, di/dt=500A/us F t Reverse Recovery Time 39 rr Turn-On Delay Time t 11 d(on) ns Turn-On Rise Time tr 6 V =30V,V =10V, DD GS R =1, I =2A, R =3 L D GEN Turn-Off Delay Time t 30 d(off) t Turn-Off Fall Time 9 f Note: 3. Pulse Test: Pulse Width 300s,Dduty Cycle2%. 4. These Parameters Have No Way to Verify. Rev.3-3-12012020 2/4 MCCSEMI.COM