Features Split Gate Trench MOSFET Technology Low Thermal Resistance Halogen Free. Green Device (Note 1) Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) 026)(7 Maximum Ratings Operating Junction Temperature Range : -55C to +150C Storage Temperature Range: -55C to +150C (2) Thermal Resistance: 3.5C/W Junction to Case DFN5060 Parameter Rating Symbol Unit Drain-Source Voltage V 100 V DS Gate-Source Volltage V 20 V GS Continuous Drain Current I 35 A D D H B (3) I 124 A Pulsed Drain Current DM A Total Power Dissipation P 35 W D PIN 1 G (4) J E 60.5 mJ C Single Pulsed Avalanche Energy AS N Note: E 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, F <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 2 2. Surface Mounted on 1 in pad area, t10 sec. K 3. Pulse Test: Pulse Width10s,Duty Cycle 1%. M 4. T =25C, L=1mH, V =50V. J DD L DIMENSIONS ,QWHUQDO 6WUXFWXUH INCHES MM DIM NOTE MIN MAX MIN MAX DD D D A 0.031 0.047 0.80 1.20 87 6 5 B 0.010 0.254 TYP. C 0.193 0.222 4.90 5.64 D0.232 0.250 5.90 6.35 E 0.148 0.167 3.75 4.25 F 0.126 0.154 3.20 3.92 G 0.189 0.213 4.80 5.40 12 3 4 H 0.222 0.239 5.65 6.06 SS S G K 0.045 0.059 1.15 1.50 J 0.012 0.020 0.30 0.50 L 0.046 0.054 1.17 1.37 M 0.012 0.028 0.30 0.71 N 0.016 0.028 0.40 0.71 Rev.3-2-12012020 1/5 MCCSEMI.COM 1 & + 11(/ 0& & 1 <Electrical Characteristics 25C (Unless Otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics V V =0V, I =250A Drain-Source Breakdown Voltage 100 V (BR)DSS GS D I V =0V, V =20V Gate-Source Leakage Current 100 nA GSS DS GS I V =80V, V =0V Zero Gate Voltage Drain Current 1A DSS DS GS V V =V , I =250A Gate-Threshold Voltage 24V GS(th) DS GS D V =10V, I =20A 14.2 17.1 m GS D Drain-Source On-Resistance R DS(on) V =6V, I =10A 20.2 26.3 m GS D Diode Characteristics I Continuous Body Diode Current 35 A S Diode Forward Voltage V V =0V, I =20A 1.3 V SD GS S Reverse Recovery Time t 47 ns rr I =20A,di/dt=100A/s S Reverse Recovery Charge Q 56 nC rr Dynamic Characteristics Input Capacitance C 1223 iss C V =50V,V =0V,f=1MHz Output Capacitance 173 pF oss DS GS C Reverse Transfer Capacitance 25 rss Q Total Gate Charge 25 g Q V =50V,V =10V,I =20A nC Gate-Source Charge 7.5 gs DS GS D Q Gate-Drain Charge 7.7 gd t Turn-On Delay Time 9.7 d(on) V =50V, V =10V, DS GEN t Turn-On Rise Time 27 r R =4.5, R =2 , ns G L t Turn-Off Delay Time 18 d(off) I =20A DS t Turn-Off Fall Time 19 f Rev.3-2-12012020 2/5 MCCSEMI.COM 0& & 1 <