X-On Electronics has gained recognition as a prominent supplier of MCAC35N10Y-TP MOSFETs across the USA, India, Europe, Australia, and various other global locations. MCAC35N10Y-TP MOSFETs are a product manufactured by Micro Commercial Components (MCC). We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

MCAC35N10Y-TP Micro Commercial Components (MCC)

MCAC35N10Y-TP electronic component of Micro Commercial Components (MCC)
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See Product Specifications
Part No. MCAC35N10Y-TP
Manufacturer: Micro Commercial Components (MCC)
Category: MOSFETs
Description: N-Channel 100V 35A (Tj) 35W Surface Mount DFN5060
Datasheet: MCAC35N10Y-TP Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 5000
Multiples : 5000
5000 : USD 0.2778
N/A

Obsolete
0
MOQ : 10000
Multiples : 10000
10000 : USD 0.2053
20000 : USD 0.2012
N/A

Obsolete
   
Manufacturer
Product Category
Package / Case
Packaging
Technology
Series
Part Status
Fet Type
Drain To Source Voltage Vdss
Current - Continuous Drain Id 25 C
Rds On Max Id Vgs
Vgsth Max Id
Gate Charge Qg Max Vgs
Vgs Max
Input Capacitance Ciss Max Vds
Fet Feature
Power Dissipation Max
Operating Temperature
Mounting Type
Supplier Device Package
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We are delighted to provide the MCAC35N10Y-TP from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MCAC35N10Y-TP and other electronic components in the MOSFETs category and beyond.

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Features Split Gate Trench MOSFET Technology Low Thermal Resistance Halogen Free. Green Device (Note 1) Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) 026)(7 Maximum Ratings Operating Junction Temperature Range : -55C to +150C Storage Temperature Range: -55C to +150C (2) Thermal Resistance: 3.5C/W Junction to Case DFN5060 Parameter Rating Symbol Unit Drain-Source Voltage V 100 V DS Gate-Source Volltage V 20 V GS Continuous Drain Current I 35 A D D H B (3) I 124 A Pulsed Drain Current DM A Total Power Dissipation P 35 W D PIN 1 G (4) J E 60.5 mJ C Single Pulsed Avalanche Energy AS N Note: E 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, F <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 2 2. Surface Mounted on 1 in pad area, t10 sec. K 3. Pulse Test: Pulse Width10s,Duty Cycle 1%. M 4. T =25C, L=1mH, V =50V. J DD L DIMENSIONS ,QWHUQDO 6WUXFWXUH INCHES MM DIM NOTE MIN MAX MIN MAX DD D D A 0.031 0.047 0.80 1.20 87 6 5 B 0.010 0.254 TYP. C 0.193 0.222 4.90 5.64 D0.232 0.250 5.90 6.35 E 0.148 0.167 3.75 4.25 F 0.126 0.154 3.20 3.92 G 0.189 0.213 4.80 5.40 12 3 4 H 0.222 0.239 5.65 6.06 SS S G K 0.045 0.059 1.15 1.50 J 0.012 0.020 0.30 0.50 L 0.046 0.054 1.17 1.37 M 0.012 0.028 0.30 0.71 N 0.016 0.028 0.40 0.71 Rev.3-2-12012020 1/5 MCCSEMI.COM 1 & + 11(/ 0& & 1 <Electrical Characteristics 25C (Unless Otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics V V =0V, I =250A Drain-Source Breakdown Voltage 100 V (BR)DSS GS D I V =0V, V =20V Gate-Source Leakage Current 100 nA GSS DS GS I V =80V, V =0V Zero Gate Voltage Drain Current 1A DSS DS GS V V =V , I =250A Gate-Threshold Voltage 24V GS(th) DS GS D V =10V, I =20A 14.2 17.1 m GS D Drain-Source On-Resistance R DS(on) V =6V, I =10A 20.2 26.3 m GS D Diode Characteristics I Continuous Body Diode Current 35 A S Diode Forward Voltage V V =0V, I =20A 1.3 V SD GS S Reverse Recovery Time t 47 ns rr I =20A,di/dt=100A/s S Reverse Recovery Charge Q 56 nC rr Dynamic Characteristics Input Capacitance C 1223 iss C V =50V,V =0V,f=1MHz Output Capacitance 173 pF oss DS GS C Reverse Transfer Capacitance 25 rss Q Total Gate Charge 25 g Q V =50V,V =10V,I =20A nC Gate-Source Charge 7.5 gs DS GS D Q Gate-Drain Charge 7.7 gd t Turn-On Delay Time 9.7 d(on) V =50V, V =10V, DS GEN t Turn-On Rise Time 27 r R =4.5, R =2 , ns G L t Turn-Off Delay Time 18 d(off) I =20A DS t Turn-Off Fall Time 19 f Rev.3-2-12012020 2/5 MCCSEMI.COM 0& & 1 <

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
MCC(Micro Commercial Components)
MICRO COMMERCIAL
Micro Commercial Co
Micro Commercial Components

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